Browsing by Author "Tu, CC"

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A new photo-sensing nano-device structure with CdSe and Au nanoparticles on silicon substrate
(2003-01-01)
Wu, CY
;
Li, YK
;
Tu, CC
;
電機工程學系
;
Department of Electrical and Computer Engineering
CdSe nanoparticles (NPs) have shown superior photoconductivity as the particle size is shrunk to nano-scale. This provides a potential application as a nano-photo-sensor. In this work, we choose the CdSe NPs with diameter of 25nm, which is comparable to the electron mean free path in bulk material, to get a high mobility in NPs. By using the DNA oligonucleotides as linkers through Au-S bonds, a new photo-sensing nano-device structure is proposed with Au NPs of 60 nm in diameter and CdSe NPs on a silicon substrate, where the CMOS interface circuits are designed to read signals of the sensor.
Design and fabrication of a photosensing nanodevice structure with CdSe and Au nanoparticles on a silicon chip
(2006-05-01)
Tu, CC
;
Li, YK
;
Chen, TM
;
Wu, CY
;
應用化學系
A newly developed tour-layered photosensing nanodevice was fabricated by integrating nanoparticles (NPs) on a silicon substrate. Through ionic interaction, negatively charged An NPs (similar to 15 nm) were assembled in alternate layers with positively charged CdSe NPs (similar to 5 nm) on the silicon oxide surface between the two Al electrodes. The silicon oxide surface after each step of the fabrication process was observed and evaluated by images obtained from the scanning electron microscope. By applying voltage biases across the electrodes, the currents were measured in the dark and under illumination using a 375-nm laser. It was found that a constant photocurrent increment can be obtained for different voltage biases, and the nanodevice structure with a longer length had less conductivity but a larger increment of photocurrent after illumination. In addition, the efficiency rate of photocurrent generation is much higher in comparison to that obtained from CdSe thin film. The fabrication process integrated a newly developed model of a diode-resistor array of semiconductor-metal junctions between CdSe and An NPs (nano-Schottky-diode structures), which can successfully explain the measured results. While nanotechnology has unprecedented advantages over the traditional silicon electronics, its technology presents physical challenges. However, the success of the fabrication of the multilayered photosensing nanodevice directly on the silicon chip paves the way for further applications and research.