Browsing by Author "Tu, Wei-Yi"

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A crosslinked fullerene matrix doped with an ionic fullerene as a cathodic buffer layer toward high-performance and thermally stable polymer and organic metallohalide perovskite solar cells
(2015-01-01)
Chao, Yi-Hsiang
;
Huang, Yi-You
;
Chang, Jen-Yun
;
Peng, Shih-Hao
;
Tu, Wei-Yi
In this study, we developed a new cathodic buffer layer consisting of a cross-linked [6,6]-phenyl-C-61-butyric styryl dendron ester (C-PCBSD) matrix and an ionic FPI dopant. The incorporation of FPI can improve the electron mobility via an anion induced charge transfer (AIET) mechanism, while maintaining the solvent-resistant properties of the crosslinked layer. ZnO combined with the C-PCBSD/FPI layer can effectively and universally improve the performance of bulk-heterojunction polymer solar cells (BHJPSCs), planar heterojunction polymer solar cells (PHJPSCs), and organic metallohalide perovskite solar cells (OMPSCs). Furthermore, the insertion of the C-PCBSD/FPI layer can improve the thermal stability of the device by preventing the residual moisture in ZnO from diffusing into the CH3NH3PbI3 layer in OMPSCs.
Synthesis of diketopyrrolopyrrole based conjugated polymers containing thieno[3,2-b]thiophene flanking groups for high performance thin film transistors
(2017-06-14)
Peng, Shih-Hao
;
Tu, Wei-Yi
;
Gollavelli, Ganesh
;
Hsu, Chain-Shu
;
應用化學系
New donor-acceptor (D-A) conjugate polymers based on 3,6-bis(2-bromothieno-[3,2-b] thiophen-5-yl)2,5- bis(2-octyldodecyl) pyrrolo[3,4-c]-pyrrole-1,4-(2H, 5H)-dione (Br-TTDPP) combined with three different electron-donating monomers bithiophene (BT), di(2-thienyl) ethene (TVT), and di(selenophene2- yl) ethene (SVS) were synthesized. The optical band gap, electrochemical properties and organic fieldeffect transistor (OFET) device performance of the TTDPP-based polymers were systematically investigated. X-ray diffraction (XRD) was used to evaluate the molecular packing of the TTDPP-based polymers. Among three polymers, TTDPP-SVS showed the smallest d-spacing and the largest distance of 0.372 for pi-pi stacking. In particular, an OTFT having a TTDPP-SVS active layer showed the highest hole mobility of 0.196 cm(2) V-1 s(-1), the lowest threshold voltage down to -3.6 V, and the highest Ion/Ioff ratio of 6.5 x 10(4). This indicates that p-extended SVS significantly improves charge transport properties.