Browsing by Author "Tung, CH"

Now showing 1 - 9 of 9

A language model based on semantically clustered words in a Chinese character recognition system
(1997-08-01)
Lee, HJ
;
Tung, CH
;
資訊工程學系
;
Department of Computer Science
This paper presents a new method for clustering the words in a dictionary into ward groups. A Chinese character recognition system can then use these groups in a language model to improve the recognition accuracy. In the language model, the number of parameters we must train beforehand can be kept to a reasonable value. The Chinese synonym dictionary Tong2yi4ci2 ci2lin2 providing the semantic features is used to calculate the weights of the semantic attributes of the character-based word classes. The weights of the semantic attributes are next updated according to the words of the Behavior dictionary, which has a rather complete word set. Then, the word classes are clustered to In groups according to the semantic measurement by a greedy method. The words in the Behavior dictionary can finally be assigned to the m groups. The parameter space for the bigram contextual information of the character recognition system is m(2). From the experimental results, the recognition system with the proposed model has shown better performance than that of a character-based bigram language model. (C) 1997 Pattern Recognition Society. Published by Elsevier Science Ltd.
A language model based on semantically clustered words in a Chinese character recognition system
(1997-08-01)
Lee, HJ
;
Tung, CH
;
交大名義發表
;
資訊工程學系
;
National Chiao Tung University
This paper presents a new method for clustering the words in a dictionary into ward groups. A Chinese character recognition system can then use these groups in a language model to improve the recognition accuracy. In the language model, the number of parameters we must train beforehand can be kept to a reasonable value. The Chinese synonym dictionary Tong2yi4ci2 ci2lin2 providing the semantic features is used to calculate the weights of the semantic attributes of the character-based word classes. The weights of the semantic attributes are next updated according to the words of the Behavior dictionary, which has a rather complete word set. Then, the word classes are clustered to In groups according to the semantic measurement by a greedy method. The words in the Behavior dictionary can finally be assigned to the m groups. The parameter space for the bigram contextual information of the character recognition system is m(2). From the experimental results, the recognition system with the proposed model has shown better performance than that of a character-based bigram language model. (C) 1997 Pattern Recognition Society. Published by Elsevier Science Ltd.
Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate
(2004-05-10)
Wu, N
;
Zhang, QC
;
Zhu, CX
;
Yeo, CC
;
Whang, SJ
Metal-oxide-semiconductor capacitors were fabricated on germanium substrates by using metalorganic-chemical-vapor-deposited HfO2 as the dielectric and TaN as the metal gate electrode. It is demonstrated that a surface annealing step in NH3 ambient before the HfO2 deposition could result in significant improvement in both gate leakage current and the equivalent oxide thickness (EOT). It was possible to achieve a capacitor with an EOT of 10.5 Angstrom and a leakage current of 5.02x10(-5) A/cm(2) at 1 V gate bias. X-ray photoelectron spectroscopy analysis indicates the formation of GeON during surface NH3 anneal. The presence of Ge was also detected within the HfO2 films. This may be due to Ge diffusion at the high temperature (similar to400 degreesC) used in the chemical-vapor deposition process. (C) 2004 American Institute of Physics.
Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrode
(2004-10-01)
Zhu, SY
;
Yu, HY
;
Chen, JD
;
Whang, SJ
;
Chen, JH
Both P- and N-channel MOSFET's with Schottky barrier silicide source/drain (S/D), high-K gate dielectric and metal gate were successfully fabricated using a simplified low temperature process. The highest temperature after the high-K dielectric formation is 420degreesC. PMOSFETs with PtSi S/D show excellent electrical performance of an I-on/I-off similar to 10(7)-10(8) and a subthreshold slope of 66 mV/dec, similar to those formed by a normal process with an optimized sidewall spacer. NMOSFETs with DySi2-x S/D have similar to3 orders of magnitude larger I-off than that of PMOSFETs and show two slopes in the subthreshold region, resulting in the I-on/I-off similar to 10(5) at low drain voltage. It can be attributed to the relatively higher barrier height (Phi(n)) of DySi2-x/n-Si than that of PtSi/p-Si (Phi(p)) and the rougher DySi2-x film. Adding a thin intermediate Ge layer (similar to1nm) between Dy and Si can improve the film morphology significantly. As a result, the improved performance of N-MOSFET is observed. (C) 2004 Published by Elsevier Ltd.
N-type Schottky barrier source/drain MOSFET using ytterbium silicide
(2004-08-01)
Zhu, SY
;
Chen, JD
;
Li, MF
;
Lee, SJ
;
Singh, J
Ytterbium silicide, for the first time, was used to form the Schottky barrier source/drain (S/D) of N-channel MOSFETs. The device fabrication was performed at low temperature, wich is highly preferred in the establishment of Schottky barrier S/D transistor (SSDT) technology, including the HfO2 gate dielectric, and HaN/TaN metal gate. The YbSi2-x, silicided N-SSDT has demonstrated a very promising characteristic with a recorded high I-on/I-off ratio of similar to10(7) and a steep subthreshold slope of 75 mV/dec, which is attributed to the lower electron barrier height and better film morphology of the YbSi2-x/Si contact compared with other self-aligned rare earth metal-(Erbium, Terbium, Dysprosium) silicided Schottky junctions.
Observations of Guinier-Preston zones in an As-deposited Al-1wt.%Si-0.5wt.%Cu thin film
(1996-05-01)
Tung, CH
;
Chiu, RL
;
Chang, PH
;
材料科學與工程學系
;
電子工程學系及電子研究所
Observations of Guinier-Preston zones in an As-deposited Al-1wt.%Si-0.5wt.%Cu thin film
(1996-05-01)
Tung, CH
;
Chiu, RL
;
Chang, PH
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Schottky-barrier S/D MOSFETs with high-K gate dielectrics and metal-gate electrode
(2004-05-01)
Zhu, SY
;
Yu, HY
;
Whang, SJ
;
Chen, JH
;
Shen, C
This letter presents a low-temperature process to fabricate Schottky-barrier silicide source/drain transistors (SSDTs) with high-kappa gate dielectric and metal gate. For p-channel SSDTs (P-SSDT) using PtSi source/drain (S/D), excellent electrical performance of I-on/I-off similar to 10(7) - 10(8) and subthreshold slope of 66 mV/dec have been achieved. For n-channel SSDTs (N-SSDTs) using DySi2-x S/D, I-on/I-off can reach similar to 10(5) at V-ds of 0.2 V with two subthreshold slopes of 80 and 340 mV/dec. The low-temperature process relaxes the thermal budget of high-kappa dielectric and metal-gate materials to be used in the future generation CMOS technology.
The effect of preheating treatment on anodic Al2O3 formed on sputtered Al thin films
(1996-03-01)
Chiu, RL
;
Chang, PH
;
Tung, CH
;
材料科學與工程學系
;
Department of Materials Science and Engineering
Al2O3 layers were grown by anodizing Al films sputtered on borophosphosilicate glass/SiO2/Si substrates and subsequently characterized by transmission electron microscopy, and by current-voltage and capacitance-voltage measurements using a metal/insulator/metal structure. Amorphous anodic oxide is formed on nonpreannealed Al film but a complex oxide film generally consisting of five sublayers (designated as amorphous I, porous I, crystalline, porous II, and amorphous II) is formed on preannealed Al film. Freshly formed anodic oxide is always amorphous in both preannealed and nonpreannealed Al thin films. The growth of the crystalline layer in preannealed samples is due to the amorphous-to-crystalline transition of the amorphous II layer. The porous I layer is formed well before the crystalline layer. The voids in this layer are probably due to the trapping of oxygen at the sites of crystalline oxide. The voids in the porous II layer are small and their formation can be attributed to the volume shrinkage associated with the amorphous-to-crystalline transition of the amorphous II layer. The amorphous oxide films exhibit excellent dielectric properties. The dielectric properties of the complex oxide are much inferior and vary significantly due to structural variation.