Browsing by Author "Tung, Cheng-Wei"

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Characteristics and Mechanisms of Silicon-Oxide-Based Resistance Random Access Memory
(2013-03-01)
Chang, Kuan-Chang
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Tsai, Tsung-Ming
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Chang, Ting-Chang
;
Wu, Hsing-Hua
;
Chen, Jung-Hui
Traditionally, a large number of silicon oxide materials are extensively used as various dielectrics for semiconductor industries. In general, silicon oxide cannot be used as resistance random access memory (RRAM) due to its insulating electrical properties. In this letter, we have successfully produced resistive switching and forming-free behaviors by zinc doped into silicon oxide. The current-voltage fitting data show that current transport mechanism is governed by Poole-Frenkel behavior in high-resistance state and Ohm's law in low-resistance state, consisting with filament theory. Additionally, good endurance and retention reliabilities are exhibited in the zinc-doped silicon oxide RRAM.
Electrical conduction mechanism of Zn:SiOx resistance random access memory with supercritical CO2 fluid process
(2013-08-19)
Chang, Kuan-Chang
;
Tsai, Tsung-Ming
;
Zhang, Rui
;
Chang, Ting-Chang
;
Chen, Kai-Huang
In this study, the electrical conduction mechanism of Zn:SiOx resistance random access memory (RRAM) treated with supercritical CO2 fluid (SCCO2) process was investigated by low temperature measurement. The current of low resistance state for current-voltage curves in SCCO2-treated and untreated Zn:SiOx RRAM were measured and compared under a low temperature range from 100K to 298 K. The electrical conduction mechanisms of hopping conduction and metal-like behaviors in SCCO2-treated and untreated Zn:SiOx RRAM were discussed, respectively. Finally, the electrical conduction mechanism was analyzed and verified by the chemical composition and bonding intensity of XPS analyses. (C) 2013 AIP Publishing LLC.
Hopping conduction distance dependent activation energy characteristics of Zn:SiO2 resistance random access memory devices
(2013-04-01)
Chen, Kai-Huang
;
Zhang, Rui
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Chang, Ting-Chang
;
Tsai, Tsung-Ming
;
Chang, Kuan-Chang
In this study, the hopping conduction distance variation of Zn:SiO2 resistance random access memory (RRAM) devices with different operating compliance currents was discussed and verified. To investigate and determine the hopping conduction distance dependent activation energy characteristics, the Arrhenius plot of low resistance state of Zn:SiO2 RRAM devices was applied, from which we proposed carrier conduction model. With the increase of current compliance, more metal ions would accumulate to form precipitates with larger diameter, which in turn resulted in the shortening of hopping distance. Because of shorter hopping distance, activation energy for carrier hopping would decrease. (C) 2013 American Institute of Physics. [http://dx.doi.org/10.1063/1.4799655]
Low Temperature Improvement Method on Zn:SiOx Resistive Random Access Memory Devices
(2013-04-01)
Chang, Kuan-Chang
;
Tsai, Tsung-Ming
;
Chang, Ting-Chang
;
Wu, Hsing-Hua
;
Chen, Kai-Huang
To improve the resistive switching properties of the resistive random access memory (RRAM), the supercritical carbon dioxide (SCCO2) fluid is used as a low temperature treatment. In this letter, the Zn:SiOx thin films are treated by SCCO2 fluid mixed with pure water. After SCCO2 fluid treatment, the resistive switching qualities of the Zn:SiOx thin films are carried out by XPS, fourier transform infrared spectroscopy, and IV measurement. We believe that the SCCO2-treated Zn:SiOx thin film is a promising material for RRAM applications due to its compatibility with portable flat panel display.
Mechanism of power consumption inhibitive multi-layer Zn:SiO2/SiO2 structure resistance random access memory
(2013-12-21)
Zhang, Rui
;
Tsai, Tsung-Ming
;
Chang, Ting-Chang
;
Chang, Kuan-Chang
;
Chen, Kai-Huang
In this paper, multi-layer Zn:SiO2/SiO2 structure is introduced to reduce the operation power consumption of resistive random access memory (RRAM) device by modifying the filament formation process. And the configuration of multi-layer Zn:SiO2/SiO2 structure is confirmed and demonstrated by auger electron spectrum. Material analysis together with conduction current fitting is applied to qualitatively evaluate the carrier conduction mechanism on both low resistance state and high resistance state. Finally, single layer and multilayer conduction models are proposed, respectively, to clarify the corresponding conduction characteristics of two types of RRAM devices. (C) 2013 AIP Publishing LLC.