Browsing by Author "Tung, Vincent"

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Electrohydrodynamic-assisted Assembly of Hierarchically Structured, 3D Crumpled Nanostructures for Efficient Solar Conversions
(2016-12-07)
Ishihara, Hidetaka
;
Chen, Yen-Chang
;
De Marco, Nicholas
;
Lin, Oliver
;
Huang, Chih-Meng
The tantalizing prospect of harnessing the unique properties of graphene crumpled nanostructures continues to fuel tremendous interest in energy storage and harvesting applications. However, the paper ball-like, hard texture, and closed-sphere morphology of current 3D graphitic nanostructure production not only constricts the conductive pathways but also limits the accessible surface area. Here, we report new insights into electrohydrodynamically-generated droplets as colloidal nanoreactors in that the stimuli-responsive nature of reduced graphene oxide can lead to the formation of crumpled nanostructures with a combination of open structures and doubly curved, saddle-shaped edges. In particular, the crumpled nanostructures dynamically adapt to non-spherical, polyhedral shapes under continuous deposition, ultimately assembling into foam-like microstructures with a highly accessible surface area and spatially interconnected transport pathways. The implementation of such crumpled nanostructures as three-dimensional rear contacts for solar conversion applications realize benefits of a high aspect ratio, electrically addressable and energetically favorable interfaces, and substantial enhancement of both short-circuit currents and fill-factors compared to those made of planar graphene counterparts. Further, the 3D crumpled nanostructures may shed lights onto the development of effective electrocatalytic electrodes due to their open structure that simultaneously allows for efficient water flow and hydrogen escape.
Ledge-directed epitaxy of continuously self-aligned single-crystalline nanoribbons of transition metal dichalcogenides
(1970-01-01)
Aljarb, Areej
;
Fu, Jui-Han
;
Hsu, Chih-Chan
;
Chuu, Chih-Piao
;
Wan, Yi
Two-dimensional transition metal dichalcogenide nanoribbons are touted as the future extreme device downscaling for advanced logic and memory devices but remain a formidable synthetic challenge. Here, we demonstrate a ledge-directed epitaxy (LDE) of dense arrays of continuous, self-aligned, monolayer and single-crystalline MoS(2)nanoribbons on beta-gallium (iii) oxide (beta-Ga2O3) (100) substrates. LDE MoS(2)nanoribbons have spatial uniformity over a long range and transport characteristics on par with those seen in exfoliated benchmarks. Prototype MoS2-nanoribbon-based field-effect transistors exhibit high on/off ratios of 10(8)and an averaged room temperature electron mobility of 65 cm(2) V-1 s(-1). The MoS(2)nanoribbons can be readily transferred to arbitrary substrates while the underlying beta-Ga(2)O(3)can be reused after mechanical exfoliation. We further demonstrate LDE as a versatile epitaxy platform for the growth of p-type WSe(2)nanoribbons and lateral heterostructures made of p-WSe(2)and n-MoS(2)nanoribbons for futuristic electronics applications. Aligned arrays of single-crystalline monolayer TMD nanoribbons with high aspect ratios, as well as their lateral heterostructures, are realized, with the growth directed by the ledges on the beta-Ga(2)O(3)substrate. This approach provides an epitaxy platform for advanced electronics applications of TMD nanoribbons.
Metal-Guided Selective Growth of 2D Materials: Demonstration of a Bottom-Up CMOS Inverter
(2019-05-03)
Chiu, Ming-Hui
;
Tang, Hao-Ling
;
Tseng, Chien-Chih
;
Han, Yimo
;
Aljarb, Areej
2D transition metal dichalcogenide (TMD) layered materials are promising for future electronic and optoelectronic applications. The realization of large-area electronics and circuits strongly relies on wafer-scale, selective growth of quality 2D TMDs. Here, a scalable method, namely, metal-guided selective growth (MGSG), is reported. The success of control over the transition-metal-precursor vapor pressure, the first concurrent growth of two dissimilar monolayer TMDs, is demonstrated in conjunction with lateral or vertical TMD heterojunctions at precisely desired locations over the entire wafer in a single chemical vapor deposition (VCD) process. Owing to the location selectivity, MGSG allows the growth of p- and n-type TMDs with spatial homogeneity and uniform electrical performance for circuit applications. As a demonstration, the first bottom-up complementary metaloxide-semiconductor inverter based on p-type WSe2 and n-type MoSe2 is achieved, which exhibits a high and reproducible voltage gain of 23 with little dependence on position.