Browsing by Author "Tweet, Doug"

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Effects of Al(x)Ga(1-x)N interlayer for GaN epilayer grown on Si substrate by metal-organic chemical-vapor deposition
(2010-05-01)
Lin, Kung-Liang
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Chang, Edward-Yi
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Hsiao, Yu-Lin
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Huang, Wei-Ching
;
Luong, Tien-Tung
GaN film grown on Si substrate using multilayer AlN/Al(x)Ga(1-x)N buffer is studied by the low-pressure metal-organic chemical-vapor deposition method. The Al(x)Ga(1-x)N films with Al composition varying from 1 to 0.66 were used to accommodate the stress induced between GaN and the Si substrate during GaN growth. The correlation of the Al composition in the Al(x)Ga(1-x)N films with respect to the stress induced in the GaN film grown was studied using high-resolution x-ray diffraction, including symmetrical and asymmetrical omega/2 theta scans and reciprocal space maps. It is found that with proper design of the Al composition in the Al(x)Ga(1-x)N buffer layer, crack-free GaN film can be successfully grown on 6 in. Si (111) substrates using multilayer AlN and Al(x)Ga(1-x)N buffer layers. (C) 2010 American Vacuum Society. [DOI: 10.1116/1.3385672]
Growth of GaN film on 150 mm Si (111) using multilayer AlN/AlGaN buffer by metal-organic vapor phase epitaxy method
(2007-11-26)
Lin, Kung-Liang
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Chang, Edward-Yi
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Hsiao, Yu-Lin
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Huang, Wei-Ching
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Li, Tingkai
High quality GaN film was successfully grown on 150 mm Si (111) substrate by metal-organic vapor phase epitaxy method using AlN multilayer combined with graded AlGaN layer as buffer. The buffer layer structure, film quality, and film thickness are critical for the growth of the crack-free GaN film on Si (111) substrate. Using multilayer AlN films grown at different temperatures combined with graded Al(1-x)Ga(x)N film as the buffer, the tensile stress on the buffer layer was reduced and the compressive stress on the GaN film was increased. As a result, high quality 0.5 mu m crack-free GaN epitaxial layer was successfully grown on 6 in. Si substrate. (C) 2007 American Institute of Physics.
MOVPE high quality GaN film grown on Si (111) substrates using a multilayer AlN buffer
(2008)
Lin, Kung-Liang
;
Chang, Edward-Yi
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Huang, Jui-Chien
;
Huang, Wei-Ching
;
Hsiao, Yu-Lin
High quality GaN films were successfully grown on Si (111) substrates using the MOVPE method and a multilayer AlN buffer. The buffer layer film quality and thickness are critical for the growth of the crack-free GaN film on Si (111) substrates. Cracks started to form on the single layer high temperature (HT) AlN film, grown on Si (111) substrate as the AlN thickness was greater than 20 nm. However, a 100 nm crack-free AlN film, can be obtained when multilayer buffer of HT-AlN/low temperature (LT)-AlN/HT-AlN was grown on the Si(111) substrate. By using multilayer AlN buffer, a 2 mu m crack-free GaN film was successful grown on the 2 '' Si (111) substrate. Moreover, the GaN film (2 mu m thick) grown on Si with a GaN (004) Mosaic FWHM of only 0.12 degrees.