Browsing by Author "Tzuang, Ching-Kuang C."

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A CMOS miniaturized C-band active bandpass filter
(2006)
Tzuang, Ching-Kuang C.
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Wu, Hsine-Hung
;
Wu, Hsien-Shun
;
Chen, Johnsea
;
電信工程研究所
This paper presents a novel topology of the CMOS active bandpass filter (BPF) at C-band. The parallel resonators in the BPF are realized by the monolithic synthetic quasi-TEM transmission line (TL), the so-called complementary conducting strip transmission line (CCS-TL). The characteristics of the CMOS monolithic CCS-TL are investigated by a series of experiments. The characteristics of the CCS-TL, including the characteristic impedance, phase constant, and attenuation constant, are extracted from the measured two-port scattering parameters for the filter design. The loss of the CCS-TL resonators is reduced by integrating an active network A practical example of a second-order active BPF is designed and fabricated by using a typical 0.18 mu m CMOS 1P6M technology. The size of prototype is 1.23 mm by 0.88 mm. The measured results show the following characteristics. The center frequency of the proposed active BPF is 6.02 GHz. The bandwidth is 1.26 GHz, and the return-loss, which is measured based on 50 Omega-system, is -7.5 dB. The insertion-loss of the BPF is 2.2dB when the BPF draws 3.0mA from a +1.8V power supply.
An X-band CMOS multifunction-chip FMCW radar
(2006)
Tzuang, Ching-Kuang C.
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Chang, Chi-Ho
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Wu, Hsien-Shun
;
Wang, Son
;
Lee, Si-Xian
A fully integrated, miniaturized, low-power frequency-modulated continuous wave (FMCW) multifunction chip realized by typical 1P6M 0.18 mu m deep n-well CMOS technology is presented for the first time. The multifunction chip consists of VCO, buffer amplifier, 3-dB power divider, isolators, driving amplifiers, mixer, low-noise amplifier, attenuator, etc., necessary for carrying out the X-band RF signal processing of the FMCW signals interfaced to dual antenna arrays. The chip real estate measures 2.4 mm by 1.3 mm. The entire FMCW chip design is based on the synthetic complementary-conducting-strips (CCS) quasi-TEM transmission line. The transmitter output is 3.5 dBm for frequencies between 9.5-11.0 GHz and maximum tuning bandwidth is nearly 150 MHz. The receiver channel has conversion gain of 6 dB. The calculated range is in good agreement with the measurement data.
CMOS active bandpass filter using compacted synthetic quasi-TEM lines at C-band
(2006-12-01)
Tzuang, Ching-Kuang C.
;
Wu, Hsien-Hung
;
Wu, Hsien-Shun
;
Chen, Johnsea
;
電信工程研究所
This paper presents a fully monolithic transmission-line-based active bandpass filter (BPF) fabricated in a 0.18-mu m standard complementary metal-oxide-semiconductor (CMOS) technology. The half-wavelength resonators are realized by synthetic quasi-TEM complementary conducting-strip transmission lines (CCS TLs). To lower the insertion loss of the BPF, the differential nMOS cross-coupled pairs are combined with the parallel resonators. Besides, the active devices and CCS TLs are vertically integrated on the standard CMOS substrate. The Q-enhanced resonator, which is comprised of a CCS TL and an nMOS cross-coupled pair, is theoretically investigated. Simulation results indicate that the Q factor of the resonator can be increased from 3.4 to 84.0 at 6.53 GHz. Additionally, the prototype of the second-order BPF occupies an area of 1230 mu m x 880 mu m, and the measured results demonstrate that the center frequency is 6.02 GHz with a bandwidth of 1.14 GHz. The P-1dB and insertion loss are -15.2 dBm and 2.2 dB, respectively, when the BPF consumes 3.0 mA from a 1.8-V supply. A two-port noisy network is also reported to examine the noise figure (NF) of the proposed BPF. Theoretical results reveal that the NF is 11.38 dB at 6.0 GHz, with a difference of less than 7.2% among the measured data.
Modeling and suppressing substrate coupling of RF CMOS FMCW sensor incorporating synthetic quasi-TEM transmission lines
(2007)
Wang, Sen
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Wu, Hsien-Shun
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Chang, Chi-Ho
;
Tzuang, Ching-Kuang C.
;
電信工程研究所
An electromagnetic (EM) model for investigating the substrate coupling of the CMOS FMCW sensor is presented. Such EM model, which invokes the large-scale field analyses, can make a quantitative assessment of the EM coupling and can be applied into the system simulations for designing the CMOS FMCW sensor. A practical example is reported to demonstrate the feasibility of the proposed model. Furthermore, the model is applied to validate the effectiveness of the chip-scale leakage suppression by incorporating the complementary conducting strips transmission line (CCS-TL). The system simulations, which are performed with the proposed EM model, compared with those of the experimental results, showing a slight difference of 2.6dB on the prediction of the isolation improvement.