Browsing by Author "Voskoboynikov, A"

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Spin-dependent electronic tunneling at zero magnetic field
(1998-12-15)
Voskoboynikov, A
;
Liu, SS
;
Lee, CP
;
交大名義發表
;
National Chiao Tung University
The spin-dependent tunneling phenomenon in symmetric and asymmetric semiconductor heterostructures at zero magnetic field is studied theoretically on the base of a single conduction band and spin-dependent boundary conditions approach. It is shown that the spin-orbit splitting in the dispersion relation for the electrons in A(III)B(V) semiconductor quantum-tunneling structures can provide a dependence of the tunneling transmission probability on the electron's spin polarization. The dependence is calculated and discussed for different kinds of tunnel heterostructures. [S0163-1829(98)04548-2].
Spin-dependent electronic tunneling at zero magnetic field
(1998-12-15)
Voskoboynikov, A
;
Liu, SS
;
Lee, CP
;
交大名義發表
;
National Chiao Tung University
The spin-dependent tunneling phenomenon in symmetric and asymmetric semiconductor heterostructures at zero magnetic field is studied theoretically on the base of a single conduction band and spin-dependent boundary conditions approach. It is shown that the spin-orbit splitting in the dispersion relation for the electrons in A(III)B(V) semiconductor quantum-tunneling structures can provide a dependence of the tunneling transmission probability on the electron's spin polarization. The dependence is calculated and discussed for different kinds of tunnel heterostructures. [S0163-1829(98)04548-2].
Spin-dependent tunneling in double-barrier semiconductor heterostructures
(1999-05-15)
Voskoboynikov, A
;
Liu, SS
;
Lee, CP
;
交大名義發表
;
National Chiao Tung University
Spin-dependent tunneling in symmetric and asymmetric double-barrier semiconductor heterostructures is studied. The effective one-band Hamiltonian approximation and spin-dependent boundary conditions approach an used for a theoretical investigation of the influence of electron spin on the tunneling probability. It is shown that spin-orbit splitting in the dispersion relation for electrons in A(III)B(V) semiconductors can provide the dependence of the tunneling transmission probability on the electron-spin polarization without additional magnetic field. The dependence can be controlled by an external electric field, and may be significant for realistic models of double-barrier semiconductor heterostructures. [S0163-1829(99)02320-6].
Spin-polarized electronic current in resonant tunneling heterostructures
(2000-01-01)
Voskoboynikov, A
;
Lin, SS
;
Lee, CP
;
Tretyak, O
;
交大名義發表
The spin-dependent tunneling phenomenon in symmetric and asymmetric resonant semiconductor heterostructures is employed in a theoretical study to investigate the output tunnel current polarization at zero magnetic field. A simple model of the resonant tunneling structures and a simple one-electron band approximation with spin-orbit interaction are used in this work. It is shown that asymmetry in the electron distribution at the electrode regions provides spin-polarized tunnel current. An approach to optimize this spin-dependent effect is explored theoretically. In asymmetric resonant tunneling structures, we estimate theoretically that the polarization can reach 40% with a moderate applied electric field. (C) 2000 American Institute of Physics. [S0021- 8979(00)09501-3].