Browsing by Author "WANG, CC"

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A NEW FABRICATION TECHNOLOGY FOR FIELD-EMISSION TRIODES WITH EMITTER-GATE SEPARATION OF 0.18-MU-M
(1995-01-01)
WANG, CC
;
LEE, WF
;
KU, TK
;
CHEN, MS
;
FENG, MS
A new fabrication technology has been used for field-emission triodes with the emitter-gate separation as small as 0.18 mum to reduce the turn-on and anode voltages. The technology is based on the thermal oxidation of silicon and low-pressure chemical vapor deposition (LPCVD) of polycrystalline silicon, making the fabrication of a sub-half-micronmeter gate opening easy and reproducible. The entire process requires use of only one photolithography mask, and does not require advanced high-resolution photolithographic techniques. In this device, the oxidation process serves the three purposes of sharpening the emitters, defining the emitter-gate separation, and achieving a high-quality insulator. The finished devices have the emitter situated exactly at the center of the gate opening due to a self-alignment process. Furthermore, the LPCVD polysilicon film can form gate electrodes with a smooth edge and a small gate opening due to excellent step coverage.
ANALYSIS OF TRANSIENT FLOW SURGE PHENOMENA IN A SINGLE-TUBE CONDENSER
(1988-05-01)
LIAO, NS
;
WANG, CC
;
TIEN, CL
;
交大名義發表
;
機械工程學系
BINDING-ENERGIES OF D- ION IN GAAS QUANTUM-WELL
(1994-04-01)
CHANG, YH
;
YEH, JJ
;
SHEU, YM
;
WANG, CC
;
CHEN, TC
Magnetic field dependent binding energies of the D- ion in the center of a 210 angstrom GaAs quantum well are determined by temperature magneto-transport measurments. The binding energies increase from 2.1 meV at 2T to 4 meV at 8T, and are consistently higher than the transition energies ootained from magneto-optical measurements performed on the same sample. We conclude from these data that in the magneto-optical measurement the observed transitions are between ground and excited D- states.
DESIGN CONSIDERATIONS OF HIGH-EFFICIENCY DOUBLE-DRIFT SILICON IMPATT DIODES
(1977)
CHANG, LC
;
HU, DH
;
WANG, CC
;
交大名義發表
;
National Chiao Tung University
SIMULATION OF THE ELECTRICAL CHARACTERISTICS OF FIELD-EMISSION TRIODES WITH VARIOUS GATE STRUCTURES
(1995-10-01)
KU, TK
;
CHEN, MS
;
WANG, CC
;
FENG, MS
;
HSIEH, IJ
A new two-dimensional numerical simulation which can accurately reproduce the empirical electrical characteristics of vertical field-emission triodes (FET's) with various gate geometries has been developed. The electrical characteristics of volcano-shaped-gate FET's were simulated for the first time and compared with those of planar-gate ones. Volcano-shaped-gate FET's exhibit significant advantages over planar-gate ones due to their superior current-voltage (I-V) properties and larger tolerance of fabrication error. A reasonable definition of emission area was obtained by applying the non-uniform current density model. For sub-micron gate aperture, the gate current is obvious only if the device structure is deeply tip-recessed. On the basis of the evaluation of the device structures including the tip cone angle, the related tip-to-gate height, the emitter shape, and the shrinkage of gate aperture, a high-aspect-ratio conical emitter with a small tip radius will be the optimum structure of FET's for low-voltage operation.
TRANSIENT-RESPONSE CHARACTERISTICS OF 2-PHASE CONDENSING FLOWS
(1990-01-01)
LIAO, NS
;
WANG, CC
;
交大名義發表
;
機械工程學系
;
National Chiao Tung University
TRANSIENT-RESPONSE OF A DOUBLE-PIPE CONDENSER TO CHANGE OF COOLANT FLOW-RATE
(1989-05-01)
WANG, CC
;
LIAO, NS
;
交大名義發表
;
機械工程學系
;
National Chiao Tung University