Browsing by Author "WANG, RL"

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MBE GROWN UNDOPED SUPERLATTICE GATE AND MODULATION-DOPED BUFFER STRUCTURE FOR POWER FET APPLICATIONS
(1989-06-01)
LIU, WC
;
HSU, WC
;
LOUR, WS
;
WANG, RL
;
CHANG, CY
MOLECULAR-BEAM EPITAXY GROWN GAAS BIPOLAR-UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE POWER TRANSISTOR
(1990-12-01)
YARN, KF
;
CHANG, CY
;
WANG, YH
;
WANG, RL
;
電控工程研究所
This letter describes a power GaAs bipolar-unipolar transition negative differential transistor (BUNDR) using n+-i-p+-i-n+ structure prepared by molecular beam epitaxy (MBE). The peak-to-valley current ratios (PVRs), peak current densities and generated power outputs can be easily modulated by changing the third external base to emitter bias. A highest PVR of 140 with V(BE) = 0.5 V at room temperature has been obtained. For power consideration, it can be compared with resonant tunneling hot electron transistors. The bipolar-unipolar transition action was also confirmed experimentally.