Browsing by Author "WANG, YH"

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A NOVEL 3-TERMINAL VOLTAGE-CONTROLLED SWITCHING DEVICE PREPARED BY MOLECULAR-BEAM EPITAXY
(1989-12-20)
WANG, YH
;
YARN, KF
;
CHANG, CY
;
電控工程研究所
;
Institute of Electrical and Control Engineering
A NOVEL DIAC-LIKE SWITCH USING DOUBLE TRIANGULAR BARRIERS
(1994-11-01)
YARN, KF
;
WANG, YH
;
CHANG, CY
;
電控工程研究所
;
Institute of Electrical and Control Engineering
In this study, a new diac-like switch using GaAs double triangular barrier structures (DTBS) prepared by molecular beam epitaxy (MBE) has been fabricated and demonstrated. Unique bidirectional current-voltage (I-V) characteristics between 300 and 77 K were realized for the first time. Large on/off voltage differences and control efficiency were observed in both directions. Based on I-V measurements, the operation mechanism of the diac-like switch was analyzed and is discussed in detail using an equivalent circuit approach. A temperature-dependent effect on the switching voltage, V(S), and holding voltage, V(H), was also investigated.
A NOVEL GAAS CURRENT-CONTROLLED BIPOLAR UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR PREPARED BY MOLECULAR-BEAM EPITAXY
(1990-06-01)
YARN, KF
;
WANG, YH
;
CHANG, CY
;
電控工程研究所
;
Institute of Electrical and Control Engineering
A TRISTATE SWITCH USING TRIANGULAR BARRIERS
(1990-02-01)
WANG, YH
;
YARN, KF
;
CHANG, CY
;
電控工程研究所
;
Institute of Electrical and Control Engineering
ANALYSIS OF STATISTICAL VOICE PACKET MULTIPLEXER WITH DNA MODEL
(1991-11-01)
CHANG, CJ
;
WANG, YH
;
交大名義發表
;
電信工程研究所
;
National Chiao Tung University
A discrete and near-uniform arrival (DNA) model is proposed to analyze a statistical voice packet multiplexer. The DNA model assumes that the arrival process of aggregate voice packets from several voice sources in talkspurt be in a discrete mode with near-uniform distribution over a packetization time. Finite queue size for the statistical voice packet multiplexer is also assumed. Results of the probability distribution functions of the queue length and the packet delay are obtained; the optimal packet length is also determined by the 99.9th percentile of delay.
CHARACTERIZATION OF A GAAS CURRENT-CONTROLLED BIPOLAR-UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR
(1990-08-20)
YARN, KF
;
WANG, YH
;
CHANG, CY
;
電控工程研究所
;
Institute of Electrical and Control Engineering
CURRENT-INJECTION 3-TERMINAL GAAS REGENERATIVE SWITCHES
(1990-05-01)
WANG, YH
;
YARN, KF
;
CHANG, CY
;
電控工程研究所
;
Institute of Electrical and Control Engineering
EFFECTS OF SB4/GA RATIOS ON THE ELECTRICAL-PROPERTIES OF GASB SCHOTTKY DIODES
(1992-03-15)
WANG, YH
;
HOUNG, MP
;
SZE, PW
;
CHEN, JF
;
CHO, AY
Au, Cu, Ag, and Al are deposited on Te-doped n-GaSb layers directly grown on lattice mismatched GaAs semi-insulating substrates. Sb4/Ga beam equivalent pressure ratios are found to profoundly influence the electrical properties of the Schottky diodes investigated here. The fact that both breakdown voltage and barrier height decrease with increasing Sb4/Ga ratios is attributed to the increase in surface state densities for samples grown at higher Sb4/Ga ratios. This suggestion is further confirmed by the model of surface state densities employing the relationship of barrier height to metal work function. The surface state densities are in the range of 2.3 x 10(14) to 1.2 x 10(15) states/cm2/eV corresponding to Sb4/Ga ratios of 2 to 9, respectively. X-ray rocking peaks of samples grown at various Sb4/Ga ratios, and subsequently subjected to annealing, indicate different interactions at the interfaces which might support the observations.
GAAS BIDIRECTIONAL BISTABILITY SWITCH USING DOUBLE TRIANGULAR BARRIER STRUCTURES
(1994-03-01)
YARN, KF
;
WANG, YH
;
CHANG, CY
;
電控工程研究所
;
Institute of Electrical and Control Engineering
We report on the experimental results of a new bidirectional bistability switching device using GaAs double triangular barrier structures prepared by molecular beam epitaxy. Bidirectional switching has been predicted experimentally in n+-n--delta(p+)-n--p+-n--delta(p+)-n--n+ structure. The significant S-shaped negative differential resistance characteristics are obtained due to the voltage-induced avalanche breakdown and potential barrier redistribution. A large on/off voltage ratio of approximately 6.5 is observed in either direction of two-state at room temperature. In addition, the device can be expected to operate as a three-terminal triggered triac.
GEOMETRY-EFFECTS ON THE GAAS BIPOLAR UNIPOLAR NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR
(1989-09-01)
YARN, KF
;
WANG, YH
;
CHANG, CY
;
電控工程研究所
;
Institute of Electrical and Control Engineering
INVESTIGATION OF 3-TERMINAL VOLTAGE-CONTROLLED SWITCHING DEVICES PREPARED BY MOLECULAR-BEAM EPITAXY
(1990-05-01)
WANG, YH
;
YARN, KF
;
CHANG, CY
;
電控工程研究所
;
Institute of Electrical and Control Engineering
INVESTIGATION OF NEGATIVE DIFFERENTIAL RESISTANCE PHENOMENA IN GASB/ALSB/INAS/GASB/ALSB/INAS STRUCTURES
(1994-10-01)
WANG, YH
;
LIU, MH
;
HOUNG, MP
;
CHEN, JF
;
CHO, AY
The negative differential resistance (NDR) phenomena were observed in GaSb/AlSb/InAs/-GaSb/AlSb/InAs resonant interband tunnel structures. Electron has resonantly achieved interband tunneling through the InAs/GaSb broken-gap quantum well. The InAs well width causes significant variations of the peak current density and NDR behaviors. The peak current density varies exponentially with the AlSb barrier thickness. The multiple NDR behavior was observed with appropriate InAs well and AlSb barrier thickness, e.g., 30 angstrom thick AlSb barrier and 240 angstrom wide InAs well. Only single negative resistance has, otherwise, been seen. The three-band model was used to interpret the effect of the InAs well and AlSb barrier on the current-voltage characteristics of GaSb/AlSb/InAs/GaSb/AlSb/InAs structures.
MOLECULAR-BEAM EPITAXY GROWN GAAS BIPOLAR-UNIPOLAR TRANSITION NEGATIVE DIFFERENTIAL RESISTANCE POWER TRANSISTOR
(1990-12-01)
YARN, KF
;
CHANG, CY
;
WANG, YH
;
WANG, RL
;
電控工程研究所
This letter describes a power GaAs bipolar-unipolar transition negative differential transistor (BUNDR) using n+-i-p+-i-n+ structure prepared by molecular beam epitaxy (MBE). The peak-to-valley current ratios (PVRs), peak current densities and generated power outputs can be easily modulated by changing the third external base to emitter bias. A highest PVR of 140 with V(BE) = 0.5 V at room temperature has been obtained. For power consideration, it can be compared with resonant tunneling hot electron transistors. The bipolar-unipolar transition action was also confirmed experimentally.
NOVEL GAAS VOLTAGE-CONTROLLABLE NEGATIVE DIFFERENTIAL RESISTANCE TRANSISTOR PREPARED BY MOLECULAR-BEAM EPITAXY
(1989-03-20)
YARN, KF
;
WANG, YH
;
CHANG, CY
;
電控工程研究所
;
Institute of Electrical and Control Engineering
ORIGIN OF THE ENHANCEMENT OF NEGATIVE DIFFERENTIAL RESISTANCE AT LOW-TEMPERATURES IN DOUBLE-BARRIER RESONANT TUNNELING STRUCTURES
(1989-07-01)
WU, JS
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CHANG, CY
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LEE, CP
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WANG, YH
;
KAI, F
ROOM-TEMPERATURE OPERATION OF A NOVEL NEGATIVE DIFFERENTIAL RESISTANCE DEVICE PREPARED BY MOLECULAR-BEAM EPITAXY
(1990-06-01)
YARN, KF
;
WANG, YH
;
CHANG, CY
;
電控工程研究所
;
Institute of Electrical and Control Engineering
VOLTAGE-CONTROLLED 3 TERMINAL GAAS NEGATIVE DIFFERENTIAL RESISTANCE DEVICE USING N+-I-P+-I-N+ STRUCTURE
(1990-06-01)
YARN, KF
;
WANG, YH
;
CHANG, CY
;
CHANG, CS
;
電控工程研究所