Browsing by Author "WANG Huan-Chung"

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Enhanced GaN Transistor and the Forming Method Thereof
(2014-11-27)
CHANG Yi
;
LIN Yueh-Chin
;
WANG Huan-Chung
An enhanced GaN transistor is provided. The structure comprises a substrate, a heterostructure, a p-element epitaxy growth layer, a drain ohmic contact and a source ohmic contact disposed on the heterostructure and on two sides of the p-element epitaxy growth layer, a gate structure disposed on the p-element epitaxy growth layer, and is separated from the drain ohmic contact and the source ohmic contact, a surface passivation layer covered the drain ohmic contact, source ohmic contact, and p-element epitaxy growth layer, and covered portion of the gate structure.