Browsing by Author "WU, CC"

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A NEW PHASE IN AN FE-9.0AL-29.5MN-1.2SI ALLOY
(1991-06-01)
WU, CC
;
LIU, TF
;
機械工程學系
;
材料科學與工程學系
;
Department of Mechanical Engineering
A new type of precipitate (designated L phase) was observed within the ferrite matrix in an Fe-9.0Al-29.5Mn-1.2Si alloy after being aged at 550-degrees-C. Transmission electron microscopy examinations indicated that the L-phase precipitate has a monoclinic structure with lattice parameters a = 0.656 nm, b = 0.797 nm, c = 0.637 nm, and beta = 109.4 deg, and the orientation relationship between the L-phase precipitate and the ferrite matrix could be stated as follows: (1BAR01)alpha-parallel-to (001)L-phase (1BAR10)alpha-parallel-to (1BAR11)L-phase with a deviation of 0.3 deg (011)alpha-parallel-to (131)L-phase with a deviation of 1.5 deg The L phase has never been observed in various Fe-Al-Mn, Fe-Mn-Si, Fe-Al-Si, and Mn-Al-Si alloy systems before.
AMPLIFICATION OF TOTAL-REFLECTION-MODE ACOUSTIC SURFACE-WAVES IN N-TYPE GAAS FILMS
(1983)
WU, CC
;
TSAI, J
;
電子物理學系
;
應用數學系
;
Department of Electrophysics
ANOMALOUS MOBILITY ENHANCEMENT IN HEAVILY CARBON-DOPED GAAS
(1994-05-15)
CHEN, HD
;
FENG, MS
;
LIN, KC
;
CHEN, PA
;
WU, CC
An anomalous mobility enhancement and metallic-type conductivity were observed in heavily carbon-doped GaAs grown by low-pressure metalorganic chemical vapor deposition. The 77 K mobility was slightly lower than that of 300 K for hole concentration between 1 x 10(18) and 4 x 10(18) cm-3. However, the 77 K mobility was enhanced from p > 4 X 10(18) cm-3, and the 300 K mobility slowly decreased with increasing hole concentration that ranged from 7 X 10(18) to 3 X 10(19) cm -3. As a result, the 77 K mobility was around 50%-60% greater than the 300 K mobility due to the metallic-type conductivity.
BACK-GATING EFFECTS ON THE GA0.1IN0.8P/INP/INGAAS HIGH-ELECTRON-MOBILITY TRANSISTOR
(1995-07-01)
LIN, KC
;
CHANG, CY
;
WU, CC
;
CHEN, HD
;
CHEN, PA
Pseudomorphic GaInP/InP/InGaAs high electron mobility transistors (HEMT) with improved Schottky contacts and excellent electrical characteristics are grown by low-pressure metal-organic chemical vapor deposition (LP-MOCVD) on the InP substrate. These HEMTs with 1.71 mu m gate length have an average extrinsic transconductance of 225 mS/mm. The back-gating effects of this device structure are investigated for the first time in this structure. Both positive and negative bias are applied to the ohmic and Schottky back-gate contacts of these devices. The positive back-gate bias has no effect on the drain current or the output transconductances of these devices. The effect of the negative back-gate bias is very similar to that when negative bias is applied on the gate of these HEMTs.
BETA-MN STRUCTURE IN AN FE-AL-MN-CR ALLOY
(1989-07-01)
LIU, TF
;
WU, CC
;
交大名義發表
;
機械工程學系
;
National Chiao Tung University
CARBON INCORPORATION DURING GROWTH OF GAAS BY TEGA-ASH3 BASE LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
(1993-06-01)
CHEN, HD
;
CHANG, CY
;
LIN, KC
;
CHAN, SH
;
FENG, MS
Heavily carbon-doped GaAs (1 X 10(18) approximately 1 X 10(20) cm-3) grown by low-pressure metalorganic chemical vapor deposition using triethylgallium and arsine as sources and liquid carbon-tetrachloride (CCl4) as dopant has been investigated. The carrier concentration was verified at various growth temperatures, V/III ratios, and CC]4 flow rates. Dopant concentration first increased from 550-degrees-C and reached a maximum at 570-degrees-C growth temperature (T(g)) and then decreased monotonously. Carbon incorporation was strongly enhanced when the V/III ratio was less than 30 at T(g) = 590-degrees-C or less than 40 at T(g) = 630-degrees-C. Hole concentration increased and then decreased as CCl4 flow rate increased. Growth rate of layers decreased as growth temperature and flow rate Of CCl4 increased. The doping efficiency of epitaxial layers grown on the (100) substrate was higher than that on the 2-degrees off toward [110] misoriented substrate. Carbon-doped GaAs films had higher Hall mobility than zinc-doped GaAs films at high doping levels due to less self-compensation. The highest dopant concentration in this system was 2.3 X 10(20) cm-3 at T(g) = 580-degrees-C and V/III = 10.
CONTINUOUS-WAVE VISIBLE INGAP/INGAALP QUANTUM-WELL SURFACE-EMITTING LASER-DIODES
(1993-11-01)
HUANG, KF
;
TAI, K
;
WU, CC
;
WYNN, JD
;
電子物理學系
CONTINUOUS-WAVE VISIBLE INGAP/INGAALP QUANTUM-WELL SURFACE-EMITTING LASER-DIODES
(1993-07-22)
TAI, K
;
HUANG, KF
;
WU, CC
;
WYNN, JD
;
電子物理學系
Vertical cavity top surface emitting lasers in the 0.66 mum visible spectral region were fabricated by the metal-organic chemical vapour deposition technique. The continuous wave threshold currents I(th) are 3.9 and 4.6 mA at -75 and -25-degrees-C, respectively, for 15 mum diameter devices. The lasers can also be operated at room temperature, but only in a pulsed mode with an I(th) of 12 mA at 25-degrees-C.
CONTINUOUS-WAVE VISIBLE INGAP/INGAALP QUANTUM-WELL SURFACE-EMITTING LASER-DIODES
(1993-07-22)
TAI, K
;
HUANG, KF
;
WU, CC
;
WYNN, JD
;
電子物理學系
Vertical cavity top surface emitting lasers in the 0.66 mum visible spectral region were fabricated by the metal-organic chemical vapour deposition technique. The continuous wave threshold currents I(th) are 3.9 and 4.6 mA at -75 and -25-degrees-C, respectively, for 15 mum diameter devices. The lasers can also be operated at room temperature, but only in a pulsed mode with an I(th) of 12 mA at 25-degrees-C.
CONTINUOUS-WAVE VISIBLE INGAP/INGAALP QUANTUM-WELL SURFACE-EMITTING LASER-DIODES
(1993-01-01)
HUANG, KF
;
TAI, K
;
WU, CC
;
WYNN, JD
;
電子物理學系
COUPLING MECHANISMS OF ACOUSTIC 2ND-HARMONIC GENERATION IN PIEZOELECTRIC SEMICONDUCTORS
(1987-04-10)
WU, CC
;
TSAI, JS
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電控工程研究所
;
Institute of Electrical and Control Engineering
DESIGN OF HOPFIELD-TYPE ASSOCIATIVE MEMORY WITH MAXIMAL BASIN OF ATTRACTION
(1993-11-25)
CHANG, JY
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WU, CC
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交大名義發表
;
電控工程研究所
;
National Chiao Tung University
A method is described for enlarging as much as possible the basin of attraction of a Hopfield-type associative memory. The proposed learning rule, a minimum-overlap learning algorithm that includes a threshold parameter, enables a Hopfield-type associative memory to be designed so that the memory will have a maximal basin of attraction. A technique that diminishes the effect of the threshold on the minimum-overlap learning algorithm is devised. Simulation results show that the basin of attraction constructed by the proposed method is indeed larger than that constructed by several well known methods.
DOPING OF INGAP EPITAXIAL LAYERS GROWN BY LOW-PRESSURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION
(1993-06-20)
WU, CC
;
LIN, KC
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CHAN, SH
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FENG, MS
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CHANG, CY
DEZn and H2Se were utilized as p- and n-type dopant sources for the growth in InGaP layers by low pressure metal-organic chemical vapor deposition (LP-MOCVD). The decrease in intensity of the extra spots of electron diffraction indicates that disordering is induced by the zinc doping. Streaky and wavy diffraction patterns demonstrate the formation of anti-phase domains caused by the Se dopant incorporation. The growth rate of the grown layer is reduced by more than 10% owing to the dopant incorporation. A photoluminescence emission energy difference of 141 meV between undoped and Zn-doped (5.8 x 10(18) cm-3) InGaP was obtained. The effects of doping on disordering, degeneracy of quasi-Fermi level and lattice constant reduction of grown layers were included in this study.
EFFECT OF ENERGY-BAND STRUCTURE ON MAGNETORESISTANCE IN N-TYPE INSB
(1975-01-01)
WU, CC
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TSAI, J
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WU, CC
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工學院
;
College of Engineering
EFFECT OF ENERGY-BAND STRUCTURES ON THE PROPAGATION OF ULTRASOUND IN DEGENERATE SEMICONDUCTORS
(1982)
WU, CC
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TSAI, JS
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應用數學系
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Department of Applied Mathematics
EFFECT OF ENERGY-BAND STRUCTURES ON TRANSVERSE MAGNETORESISTANCE OF DEGENERATE SEMICONDUCTORS IN STRONG MAGNETIC-FIELDS
(1980-01-01)
WU, CC
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CHEN, A
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應用數學系
;
Department of Applied Mathematics
EFFECT OF NON-ELLIPSOIDAL NONPARABOLIC BAND-STRUCTURE ON MAGNETORESISTANCE IN BISMUTH
(1976-01-01)
WU, CC
;
TSAI, J
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應用數學系
;
Department of Applied Mathematics
EFFECT OF NON-PARABOLICITY ON AMPLIFICATION OF SURFACE PHONONS IN PIEZOELECTRIC SEMICONDUCTOR-FILMS
(1982)
WU, CC
;
TSAI, J
;
應用數學系
;
Department of Applied Mathematics
EFFECT OF NON-PARABOLICITY ON LONGITUDINAL CONDUCTIVITY OF DEGENERATE SEMICONDUCTORS FOR TRANSVERSE ULTRASOUND IN STRONG MAGNETIC-FIELDS
(1982)
WU, CC
;
TSAI, J
;
應用數學系
;
Department of Applied Mathematics
EFFECT OF NON-PARABOLICITY ON TRANSVERSE MAGNETORESISTANCE OF SEMICONDUCTORS IN STRONG MAGNETIC-FIELDS
(1978-01-01)
WU, CC
;
CHEN, A
;
應用數學系
;
Department of Applied Mathematics