Browsing by Author "Wang, Chao-Chun"

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A REAL-TIME UNUSUAL VOICE DETECTOR BASED ON NURSING AT HOME
(2009)
Jing, Min-Quan
;
Wang, Chao-Chun
;
Chen, Ling-Hwei
;
資訊工程學系
;
Department of Computer Science
In this paper, we will propose a method to detect an unusual voice for nursing system. Based on the healthy condition of a person, we define four kinds of unusual voices including cough, groan, wheeze and cry for help. When the person nursed sends out the unusual voices, we judge that his health condition have a doubt, and need someone to pay attention. In order to detect the unusual voices, we extract five features on audio waveform, including the number of segmented parts, duration of waveform, mean of volume, zero crossing rate and correlation. Experimental results show that the detection rate is 94%similar to 97% for these four kinds of unusual voices. In false alarm, there are only 0.08% of wrong rates.
Reduction of photoleakage current in polycrystalline silicon thin-film transistor using NH(3) plasma treatment on buffer layer
(2008-04-14)
Lu, Hau-Yan
;
Chang, Ting-Chang
;
Liu, Po-Tsun
;
Li, Hung-Wei
;
Hu, Chin-Wei
The technology of polycrystalline silicon thin-film transistors (poly-Si TFTs) with low photoleakage current is developed in this work. The electrical characteristics of poly-Si TFTs under illumination were significantly improved employing the NH(3) plasma treatment on the buffer layer, with no need for complicate device structure and additional masks. The trap states that originated from the plasma bombardment on the interface between the poly-Si layer and buffer oxide can effectively recombine the light-induced electron-hole pairs. The fewer residual electron-hole pairs lead to the lower photoleakage current and improved subthreshold swing, as well as maintaining good electrical characteristics in the dark sate. (C) 2008 American Institute of Physics.
Reduction of photoleakage current in polycrystalline silicon thin-film transistor using NH3 plasma treatment on buffer layer
(2008-04-14)
Lu, Hau-Yan
;
Chang, Ting-Chang
;
Liu, Po-Tsun
;
Li, Hung-Wei
;
Hu, Chin-Wei
The technology of polycrystalline silicon thin-film transistors (poly-Si TFTs) with low photoleakage current is developed in this work. The electrical characteristics of poly-Si TFTs under illumination were significantly improved employing the NH3 plasma treatment on the buffer layer, with no need for complicate device structure and additional masks. The trap states that originated from the plasma bombardment on the interface between the poly-Si layer and buffer oxide can effectively recombine the light-induced electron-hole pairs. The fewer residual electron-hole pairs lead to the lower photoleakage current and improved subthreshold swing, as well as maintaining good electrical characteristics in the dark sate. (C) 2008 American Institute of Physics.