Browsing by Author "Wang, Chieh"

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3D Ferroelectric-like NVM/CMOS Hybrid Chip by sub-400 degrees C Sequential Layered Integration
(2012-01-01)
Lien, Yu-Chung
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Shieh, Jia-Min
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Huang, Wen-Hsien
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Hsieh, Wei-Shang
;
Tu, Cheng-Hui
For the first time, a sequentially processed 3D hybrid chip is demonstrated by stacking low-temperature (LT) Ferroelectric-like (FE-like) metal-oxide nonvolatile memory (NVM) and CMOS. The high-mobility (333 and 113 cm(2)/V-s) and low-subthreshold swing (97 and 112 mV/decade) N/P-type thin film transistors (TFTs) construct stacked inverters showing sharp transfer characteristic as the fundamental element of CMOS array and stacked 3D NVMs. The sequential layered integration is enabled by cutting-edge low thermal-budget plasma/laser processes and self-assembled FE-like metal-oxide materials. The implementation of sub-400 degrees C new-type metal-ion (Eu+3)-mediated atomic-polar-structured (Eu+3-APS) dielectric realizes stackable FE-like NVMs with program speed of 100 nanosecond, toward future 3D layered CMOS with giant high-speed dat-storage application era.
Fast programming metal-gate Si quantum dot nonvolatile memory using green nanosecond laser spike annealing
(2012-04-02)
Lien, Yu-Chung
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Shieh, Jia-Min
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Huang, Wen-Hsien
;
Tu, Cheng-Hui
;
Wang, Chieh
The ultrafast metal-gate silicon quantum-dot (Si-QD) nonvolatile memory (NVM) with program/erase speed of 1 mu s under low operating voltages of +/-7V is achieved by thin tunneling oxide, in situ Si-QD-embedded dielectrics, and metal gate. Selective source/drain activation by green nanosecond laser spike annealing, due to metal-gate as light-blocking layer, responds to low thermal damage on gate structures and, therefore, suppresses re-crystallization/deformation/diffusion of embedded Si-QDs. Accordingly, it greatly sustains efficient charge trapping/de-trapping in numerous deep charge-trapping sites in discrete Si-QDs. Such a gate nanostructure also ensures excellent endurance and retention in the microsecond-operation Si-QD NVM. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3700729]
High performance hybrid white OLEDs based on new platinum complexes and new blue fluorescence host
(2014-01-01)
Poloek, Anurach
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Wang, Chieh
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Lin, Chiao-Wen
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Chen, Chin-Ti
;
Chen, Chao-Tsen
A new series of platinum complexes containing 4-hydroxy-1,5-naphtyridine derivative with different substitutens such as methyl, dimethyl, phenyl, phenoxy, dimethyl amine, piperidine, morpholine, phenoxazine or carbazole unit as the primary ligand and 2-(2,4-difluorophenyl)pyridine as the secondary ligand were synthesized and characterized. Single crystal X-ray diffraction studies of FPtOPhND, FPtCzND and FPtdmaND showed trans-coordinated in distorted square-planar geometry. Their photophysical properties and electrochemical properties were examined. All platinum complexes in these series exhibited dual emissions not only in solution but also in solid state thin film. Employing CBP or 4P-NPD as host material, high efficiency monochromatic and high quality hybrid white organic light emitting diodes (WOLEDs) were achieved with the single platinum complex dopant device, a relatively simple device configuration.
Monolithic 3D Chip Integrated with 500ns NVM, 3ps Logic Circuits and SRAM
(2013)
Shen, Chang-Hong
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Shieh, Jia-Min
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Wu, Tsung-Ta
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Huang, Wen-Hsien
;
Yang, Chih-Chao
For the first time, a sequentially processed sub-50nm monolithic 3D IC with integrated logic/NVM circuits and SRAM is demonstrated using multiple layers of ultrathin-body (UTB) MOSFET-based circuits interconnected through 300nm-thick interlayer dielectric (ILD). High-performance sub-50nm UTB MOSFETs using deposited ultra-flat and ultra-thin (20nm) epi-like Si enable across-layer and in-layer high-speed 3ps logic circuits and 1-T 500ns plasma-MONOS NVMs as well as 6T SRAMs with static noise margin (SNM) of 280 mV and reduced footprint by 25%. Closely stacked monolithic 3D circuits envision advanced high-performance, rich function, and low power intelligent mobile devices.
New platinum complexes exhibiting host dependent photoluminescence as single dopants in double emitting layer, voltage independent hybrid white electroluminescence devices
(2015-01-01)
Poloek, Anurach
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Wang, Chieh
;
Chang, Yung-Ting
;
Lin, Chiao-Wen
;
Chen, Chao-Tsen
Four heteroleptic platinum complexes (FPtXNDs) bearing 4-hydroxy-1,5-naphthyridine (XND) derivatives functionalized with phenyl (X = Ph), dimethylamino (X = dma), morpholino (X = mor), or phenoxazino (X = pxz) units as one ligand and 2-(2,4-difluorophenyl) pyridine (F) as the other common ligand were newly synthesized and characterized. Each platinum complex has absorption and photoluminescence (PL) spectroscopic characteristics. As demonstrated by X-ray crystallography (of FPtdmaND and FPtpxzND), electrochemical and theoretical studies, the unusual spectroscopic features of FPtpxzND (such as its weak absorption band around 450-600 nm, its significant concentration dependent solution PL wavelength but low host dependent thin film PL wavelength (which is relatively long) and its particularly low solution PL quantum yield (Phi(PL))) the relatively strong absorption of FPtdmaND and FPtmorND, and the relatively long PL wavelength of FPtPhND have been reasonably explained. After each platinum complex had been examined for monochromatic organic lightemitting diodes (OLEDs), having a relatively high FPL as well as an appropriate greenish yellow PL in the monomeric form and an orange to red PL in the aggregate/excimeric form, FPtdmaND and FPtmorND have been chosen as dopant materials in the construction of single or double emitting layer (EML) hybrid white organic light-emitting diodes (OLEDs). A high performance warm white electroluminescence (EL) (CIEx,y (0.42-0.43, 0.43-0.44)) was obtained where the same platinum complex dopant FPtdmaND was doped (5 or 8 wt%) in two EMLs, 4,4\'-di(9H-carbazol-9-yl)-1,1\'-biphenyl (CBP) harvesting monomeric emission and the highly fluorescent blue N,N\'-di-1-naphthalenyl-N,N\'-diphenyl-[1,1\':4\',1 \'\':4 \'\',1\'\'\'-quaterphenyl]-4,4\'\'\'-diamine (4P-NPD) harvesting excimer/aggregate emission. This warm white EL showed a high colour rendering index (CRI) of 86-88, and a reasonably good EL efficiency of 9.7%, 22.5 cd A(-1), or 10.7 lm W-1. EL with improved white chromaticity (CIEx,y (0.37-0.39, 0.39-0.41)) can be obtained using FPtmorND as the single dopant, although it has a somewhat inferior CRI (84-86) and EL efficiency (8.3%, 20.1 cd A(-1), or 9.5 lm W-1). Nevertheless, both double EML hybrid white OLEDs exhibit a rather constant CRI and CIEx,y under a driving voltage between 7 and 10 V.
Solid state molecular packing and photoluminescence of platinum complexes based on 1,5-naphthyridin-4-plate ligands
(2015-01-01)
Chen, Chin-Ti
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Poloek, Anurack
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Wang, Chieh
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Lin, Chiao-Wen
;
Chen, Chao-Tsen