Browsing by Author "Wang, Chieh-An"

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All GaN-on-Si High Power Module Design and Performance Evaluation
(2013)
Cheng, Stone
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Wang, Chieh-An
;
Chou, Po-Chien
;
Chieng, Wei-Hua
;
Chang, Edward Yi
This paper presents a 270-V, 56-A GaN power module with three AlN substrates are prepared for the module. Each substrate is composed of three parallel connected GaN chips which incorporates six 2-A AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) cells. The substrate layout inside the module is designed to reduce package parasitic. The devices are wire-bonded in parallel connection to increase the power rating. The packaged GaN HEMTs exhibit the pulsed drain current of 0.435 A/mm. Both DC and pulsed current-voltage (ID-VDS) characteristics are measured for different connection and sizes of devices, at various of power densities, pulse lengths, and duty factors. The other static parameters like threshold voltage and leakage currents were extracted to show how these parameters would scale as the devices are paralleled. Performance of multiple chip GaN power module package is studied. Experimental results demonstrated the ability to parallel nine GaN HEMTs die together and to verify the current sharing during the dynamic switching to attain high-current capacities.
In Depth Thermal Analysis of Packaged GaN on Si Power Devices
(2013)
Wang, Chieh-An
;
Chou, Hsin-Ping
;
Cheng, Stone
;
Chou, Po-Chien
;
機械工程學系
AlGaN/GaN high electron mobility transistors (HEMTs) are one of the prospective candidates for high switching frequency power electronics applications thanks to its wide band gap (3.4eV), high breakdown voltage, large critical electric field, high carrier mobility, and the inherent high speed characteristics. With the high power densities that AlGaN/GaN HEMTs are capable of reaching, heat dissipation is a crucial issue. This paper presents the thermal analysis of packaging development, the device is attached on a V-groove copper base, and mounted on TO-3P leadframe to enhance Si substrate thermal dissipation. The effects of structure design and fabrication processes on the device performance as well as thermal resistance were studied. In addition, micro-Raman/Infrared (IR) thermography was used to investigate temperature profiles and hot spot of the devices. Simulations provide key insights into device operation and the thermal mechanisms that affect reliability. After incorporating self-heating effect in calculations of current-voltage characteristics, our results agreed well with experimental data.