Browsing by Author "Wang, Chin Meng"

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Enhancement of Stress-Memorization Technique on nMOSFETs by Multiple Strain-Gate Engineering
(2009)
Lu, Tsung Yi
;
Wang, Chin Meng
;
Chao, Tien-Sheng
;
電子物理學系
;
Department of Electrophysics
An enhanced stress memorization-technique that utilizes a strain proximity free technique (SPFT) and a stacked-gate structure has been demonstrated by multiple strain-gate engineering. The electron mobility of n-channel metal-oxide semiconductor field effect transistors (nMOSFETs) with SPFT exhibit a 16% increase compared to that of counterpart techniques. SPFT avoids the limitation of stressor volume for performance improvement in high-density complementary metal oxide semiconductor circuits. We also found that optimization of stacked, random poly-Si-grain gate structure in combination with SPFT can improve mobility further to 22% more than a single poly-Si gate structure without SPFT.