Browsing by Author "Wang, Chiung-Hsin"

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Characterizations and thermal stability improvement of phase-change memory device containing Ce-doped GeSbTe films
(2012-02-29)
Huang, Yu-Jen
;
Tsai, Min-Chuan
;
Wang, Chiung-Hsin
;
Hsieh, Tsung-Eong
;
材料科學與工程學系
Phase-transition temperature of GeSbTe (GST) chalcogenide film was drastically increased from 159 to 236 degrees C by cerium (Ce) doping (up to 8.6 at.%) without altering the resistivity property of GST. Grain refinement via the solid-solution mechanism and the amplification of p-type semiconducting behavior in Ce-doped GST were observed. They were correlated with the enhancement of thermal stability and data retention property of GST as revealed by exothermal and isothermal analyses. Phase-change memory (PCM) device characterized at various temperatures revealed an effective thermal stability improvement on the threshold voltage of PCM device by Ce doping. (c) 2011 Elsevier B.V. All rights reserved.
Characterizations of AgInSbTe and Its Nanocomposite Thin Films for Phase-Change Memory Applications
(2010)
Huang, Yu-Jen
;
Chung, Tzu-Chin
;
Wang, Chiung-Hsin
;
Hsieh, Tsung-Eong
;
材料科學與工程學系
Phase transition kinetics and microstructures of AgInSbTe (AIST) and AIST-SiO(2) nanocomposite applied to phase-change memories (PCMs) are investigated. In situ electrical property measurement found that the incorporation of SiO(2) escalates the recrystallization temperature (T(x)) of nanocomposite. Both X-ray diffraction and transmission electron microscopy showed grain refinement in the nanocomposite which, in turn, results in an increase of the activation energy (E(a)) of phase transition, as indicated by subsequent Kissinger's analysis. Increase of T(x) and E(a) in the nanocomposite was ascribed to AIST grain refinement and hindrance to grain growth due to dispersed SiO(2) particles in the sample matrix. Johnson-Mehl-Avrami analysis revealed the decrease of Avrami exponent in nanocomposite, implying that the dispersed SiO(2) particles promote the heterogeneous phase transition. Static I-V characteristics and reversible binary switching behavior of PCM devices not only confirmed the results of microstructure characterizations but also illustrated the feasibility of the AIST and its nanocomposite layer for PCM fabrication. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3502531] All rights reserved.