Browsing by Author "Wang, Di-Yan"

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Creation of 3D Textured Graphene/Si Schottky Junction Photocathode for Enhanced Photo-Electrochemical Efficiency and Stability
(2019-08-01)
Ku, Che-Kuei
;
Wu, Po-Hsieh
;
Chung, Cheng-Chu
;
Chen, Chun-Chi
;
Tsai, Kaijie
This work presents a novel photo-electrochemical architecture based on the 3D pyramid-like graphene/p-Si Schottky junctions. Overcoming the conventional transfer technique by which only planar graphene/Si Schottky junctions are currently available, this work demonstrates the 3D pyramid-like graphene/p-Si Schottky junction photocathode, which greatly enhances light harvesting efficiency and exhibits promising photo-electrochemical performance for hydrogen generation. The formation of 3D pyramid-like graphene/p-Si Schottky junctions exhibits enhanced electrochemical activity and promotes charge separation efficiency compared with the bare pyramid Si surface without graphene. The inherent chemical inertness of graphene significantly improves the operational stability of 3D graphene/p-Si Schottky junction photo-electrochemical cells. The 3D pyramid-like graphene/p-Si Schottky junction photocathode delivers an onset potential of 0.41 V and a saturated photocurrent density of -32.5 mA cm(-2) at 0 V (vs RHE) with excellent stability comparable to values reported for textured or nanostructured p-Si photocathodes coated with ultrathin oxide layers by the conventional atomic layer deposition technique. These results suggest that the formation of graphene/Si Schottky junctions with a 3D architecture is a promising approach to improve the performance and durability of Si-based photo-electrochemical systems for water splitting or solar-to-fuel conversion.
Low operation voltage macromolecular composite memory assisted by graphene nanoflakes
(2013)
Lai, Ying-Chih
;
Wang, Di-Yan
;
Huang, I-Sheng
;
Chen, Yu-Ting
;
Hsu, Yung-Hsuan
The trend towards simple and low-cost processing is one of the most important for macromolecular memory development. Here, bistable memory devices using a solution-processable active material, a mixture of graphene nanoflakes (GNFs) and insulating poly(vinyl alcohol) (PVA), are investigated, which serve as the first example for the direct integration of as-prepared nanoscale graphene into macromolecular memory devices through a one-step low-temperature processing method. Bistable electrical switching behavior and nonvolatile rewritable memory effects are realized by using an indium-tin-oxide/GNF-PVA/silver (ITO/GNF-PVA/Ag) sandwich structure. The resulting device exhibits low operation voltages of +1.4 V (turn-on) and -1.3 V (turn-off), which is promising for memory cells with low power consumptions. The programmable ON- and OFF-states possess a retention time of over 10(4) s and endure up to 10(7) read pulses. The carrier transport in the OFF- and ON-states follows the typical trap-limited space charge limited current and Ohmic laws, respectively. The asymmetric electrical switch behavior is therefore attributed to conducting filaments formed in the PVA layer assisted by the charged GNFs that induce the transition of the conductivity. Our study provides a potential approach for integrating as-prepared graphene into macromolecular memory devices with excellent performances through a simple solution-process.