Browsing by Author "Wang, H. S."

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A multi-criterion interaction-oriented model with proportional rule for designing supply chain networks
(2007-11-01)
Che, Z. H.
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Wang, H. S.
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Sha, D. Y.
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工業工程與管理學系
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Department of Industrial Engineering and Management
Supply chain management has offered a way to improve the industrial environment becomes more competitive. While, the commonly seen methodologies may be effective in solving the production-distribution problem only from supplier- or customer-oriented consideration, those cannot present the interactive relationship between upstream and downstream enterprises. In the competitive semiconductor industry environment, considering the viewpoints of the supplier and consumer simultaneously is particularly required, because multiple manufacturing and demanding steps are performed at separate situations, concurrently. In this paper, we propose an interaction-oriented approach, which bases on the analytic hierarchy process (AHP) methodology and proportional rule, to solve the semiconductor distribution problem with multiple quantitative and qualitative criteria. The developed approach gives an expected satisfaction for the all participators of the whole chain while the cooperative information is shared perfectly and effectively. Analysis results demonstrate the proposed methodology is efficient and effective through a real world case study. (c) 2006 Elsevier Ltd. All rights reserved.
Effect of nitrogen contents on the temperature dependence of photoluminescence in InGaAsN/GaAs single quantum wells
(2006-07-01)
Lai, Fang-I
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Kuo, S. Y.
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Wang, J. S.
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Kuo, H. C.
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Wang, S. C.
A series of InGaAsN/GaAs single-quantum wells (SQWs) with N contents varied from 0% to 5.3% were grown by molecular-beam epitaxy using a solid As and a nitrogen plasma sources. The impact of nitrogen concentration on the optical properties, as determined by the temperature dependence of photoluminescence (PL), of a 6 nm SQW was investigated. In the low-temperature region, a pronounced temperature-dependent S-shaped peak position was observed in PL spectra while increasing the nitrogen concentration. Quenching behavior reveals that the defect-related nonradiative processes might be enhanced in the highly nitrogen incorporated samples and thus influence the recombination dynamics. In addition, the evolution of the peak position of the InGaAsN/GaAs samples was in agreement with the empirical Varshni model in the high-temperature region. A significant reduction in the temperature dependence of the emission peak position is analyzed as well, and further confirms the prediction of proposed band anticrossing model of the electronic structure of III-N-V alloys. (c) 2006 American Vacuum Society.