Browsing by Author "Wang, HS"

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Enhanced luminance and thermal properties of poly(phenylenevinylene) copolymer presenting side-chain-tethered silsesquioxane units
(2005-11-01)
Chou, CH
;
Hsu, SL
;
Yeh, SW
;
Wang, HS
;
Wei, KH
We have synthesized, using the Gilch polymerization method, a new series of high-brightness, soluble copolymers (POSS-PPV-co-MEHPPV) of poly(p-phenylenevinylene) (PPV) containing side-chain-tethered polyhedral oligomeric silsesquioxane (POSS) pendent units and poly(2-methoxy-5-[2-ethylhexyloxy]-1,4-phenylenevinylene) (MEHPPV). This particular molecular architecture of POSS-PPV-co-MEHPPV copolymers possesses not only a larger quantum yield (0.85 vs 0.19) but also higher degradation and glass transition temperatures relative to those of pure MEHPPV. The maximum brightness of a double-layered-configured light-emitting diode (ITO/PEDOT/emissive polymer/Ca/Al) incorporating a copolymer of MEHPPV and 10 mol % PPV-POSS was 5 times as large as that of a similar light-emitting diode incorporating pure MEHPPV (2196 vs 473 cd/m(2)).
Temperature-dependent optical properties of In0.34Ga0.66As1-xNx/GaAs single quantum well with high nitrogen content for 1.55 mu m application grown by molecular beam epitaxy
(2006-05-15)
Lai, FI
;
Kuo, SY
;
Wang, JS
;
Hsiao, RS
;
Kuo, HC
The temperature dependence of optical properties of InGaAsN/GaAs single-quantum wells grown by solid source molecular beam epitaxy (MBE) with N contents varied from 0% to 5.3% was investigated by photoluminescence (PL). The evolution of the peak positions of InGaAs/GaAs sample are in agreement with the empirical Varshni model. However, pronounced temperature-dependent S-shaped peak positions and N-shaped linewidth were observed in PL spectra while increasing nitrogen concentration. The activation energy of InGaAsN/GaAs single quantum well (SQWs) is observed to decrease with nitrogen incorporation, which is contrary to the expectation of the bandgap reduction. This phenomenon suggests that the existence of defect-related nonradiative processes is due to nitrogen incorporation. The results of measurement demonstrate that the nitrogen incorporation into the InGaAsN has strong influence not only on carrier localization but also on the optical quality. In addition, the growth of high nitrogen content (5.3%) shows that the InGaAsN might be the potential candidate for long-wavelength optoelectronic devices. (c) 2006 Elsevier B.V. All rights reserved.