Browsing by Author "Wang, Hau-Wei"

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3D Hand Posture Estimation and Task Semantic Monitoring Technique for Human-Robot Collaboration
(2013-01-01)
Hu, Jhen-Jia
;
Li, Hui-Chieh
;
Wang, Hau-Wei
;
Hu, Jwu-Sheng
;
電控工程研究所
We develop a monitoring system for human-robot collaboration (HRC) of hybrid automation. The system enables the production line to avoid product defects as well as guarantee a real-time warning system in a cellular manufacturing (CM). A task semantic monitoring system includes the three-dimensional (3D) hand posture estimation and the motion trajectory monitoring. The coordinate of hand, the motion of hand, and the semantic of hand are identified by two integrated modules. The verification is executed by applying the system to the assembly lines for power protector.
Enhanced field emission characteristics in metal-coated Si-nanocones
(2013)
Chang, Yuan-Ming
;
Kao, Pin-Hsu
;
Tai, Hung-Ming
;
Wang, Hau-Wei
;
Lin, Chih-Ming
Metallic gold (Au) and platinum (Pt) thin films were deposited on silicon nanocones (Si-NCs) by sputtering to elucidate the effects of work function and conductivities on the field electron emission characteristics of surface-modified Si-NCs. The results showed that for Pt/Si-NCs and Au/Si-NCs, although the turn-on field defined at a corresponding current density of 10 mu A cm(-2) only improved from 4.20 V mu m(-1) for bare Si-NCs to 3.65 and 2.90 V mu m(-1), respectively, the emission current density measured at 5.00 V mu m(-1) was enhanced by orders of magnitude, reaching 1.82 mA cm(-2) for Au/Si-NCs. Compared to those obtained from various surface-modified Si-nanostructures, such as ZnO/Si-nanopillars and ferroelectrics/Si-nanotips, the current results represent an interesting alternative route for producing surface-modified Si-NCs that might be useful for optical and electronic applications.
Optoelectronic properties in vertically aligned ZnO/Si-nanopillars
(2012)
Lee, Hsin-Yi
;
Chang, Yuan-Ming
;
Tseng, Wen-Shou
;
Kao, Pin-Hsu
;
Wang, Hau-Wei
An effective method of fabricating vertically aligned silicon nanopillars (Si-NPs) was realized by using the self-assembled silver nanodots as natural metal-nanomask for subsequent etching process. Ultrathin (similar to 9 nm) ZnO films were deposited on the Si-NPs by atomic layer deposition to enhance the field emission property. The turn-on field defined by the 10 mu A/cm(2) current density criterion is similar to 0.74 V/mu m with an estimated beta similar to 1.33X10(4). The low turn-on field and marked enhancement in beta were attributed to the small radius of curvature, high aspect ratio, and perhaps more importantly, proper density distribution of the ZnO/Si-NPs. On the other hand, room-temperature ultraviolet (UV) luminescence was investigated for the atomic layer deposited ZnO films grown on Si nanowires fabricated by self-masking dry etching in hydrogen-containing plasma. For films deposited at 200 degrees C, an intensive UV emission corresponding to free-exciton recombination was observed with a nearly complete suppression of the defect-associated broad visible range emission peak.