Browsing by Author "Wang, J. L."

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Characteristics of Zinc Oxide Thin Film Transistors Fabricated by Location-Controlled Hydrothermal Method
(2010)
Yang, P. Y.
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Wang, J. L.
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Tsai, W. C.
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Wang, S. J.
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Chen, P. C.
In this paper, high-performance Zinc oxide (ZnO) thin-film transistors (TFTs) with bottom-gate (BG) structure and artificially location-controlled lateral grain growth have been prepared by low-temperature hydrothermal method. As the proper design of source/drain structure of ZnO/Ti/Pt thin films, the lateral grain growth can be artificially controlled in the desired location and the vertical grain boundary perpendicular to the current flow in the channel region can be reduced to single one. As compared with the conventional sputtered ZnO BG-TFTs, the proposed location-controlled hydrothermal ZnO BG-TFTs (W/L = 250 mu m/10 mu m) demonstrated the higher field-effect mobility of 6.09 cm(2)/V.s, lower threshold voltage of 3.67 V, larger on/off current ratio above 10(6), and superior current drivability, which can be attributed to the high-quality ZnO thin films with the reduced vertical grain boundaries in the channel region.
New understanding of metal-insulator-metal (MIM) capacitor degradation behavior
(2007)
Hung, Chi-Chao
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Oates, Anthony S.
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Lin, H. C.
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Chang, Percy
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Wang, J. L.
This work provides an innovative understanding of MIM capacitor degradation behavior under a wide range of constant current stress (CCS) conditions. It was found that capacitance degrades with stress, but the behavior of the degradation strongly depends on the stress current density. At high stress levels, the capacitance increases logarithmically as the injection charge increases until dielectric breakdown occurs. At lower stress conditions, the degradation rate is proportional to the stress current, and reverses after a certain period of time. A metal-insulator interlayer is observed to explain this reversal phenomenon.
UV photodetectors with lateral self-assembled ZnO nanowires grown at low temperature
(2009)
Yang, P. Y.
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Lee, I. C.
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Chang, C. T.
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Lin, K. C.
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Wang, J. L.
In this paper, a self-assembled lateral growth of ZnO nanowire (NW) photodetector has been successfully synthesized by an aqueous solution method at low temperature (85 degrees C). The growth of ZnO NWs on a silicon substrate with a ZnO seeding layer exhibits single-phase wurtzite ZnO crystal structure, and grows along the c-axis direction. Furthermore, we have demonstrated the current-voltage characteristics and photoresponse of the ZnO NWs with and without UV (325 nm) illumination. Therefore, this low-temperature and simple fabrication process is a viable processing technique to selectively grow lateral ZnO NWs on a flat substrate of any material, with potential applications in flexible NW devices.