Browsing by Author "Wang, J. S."

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A comprehensive study of temperature-dependent reflectance and photoluminescence of Zn(1-x)Mn(x)O thin films grown on c-Al(2)O(3)
(2009-03-01)
Lin, D. Y.
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Lin, H. J.
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Wu, J. S.
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Chou, W. C.
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Yang, C. S.
We present a systematic study of temperature-dependent reflectance (R) and photoluminescence (PL) measurements on ZnMnO films grown by plasma-assisted molecular beam epitaxy. For the first time, the three free-exciton transitions FX(A) (Gamma(7c)-Gamma(u)(7v)), FX(B) (Gamma(7c)-Gamma(9v)), and FX(C) (Gamma(7c)-Gamma(l)(7v)) and the longitudinal-optical phonon replicas of FX(B) and FX(C) of ZnMnO films have been clearly observed in the R spectra. The parameters describing the activation energy and the temperature dependence of the transition energy and broadening have been extracted by fitting the experimental R and PL spectra. The spectral data of ZnMnO films not only show the deterioration of crystalline quality with increasing Mn composition fraction but also indicate the Mn clustering caused by Mn atom segregation.
A comprehensive study of temperature-dependent reflectance and photoluminescence of Zn1-xMnxO thin films grown on c-Al2O3
(2009-03-01)
Lin, D. Y.
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Lin, H. J.
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Wu, J. S.
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Chou, W. C.
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Yang, C. S.
We present a systematic study of temperature-dependent reflectance (R) and photoluminescence (PL) measurements on ZnMnO films grown by plasma-assisted molecular beam epitaxy. For the first time, the three free-exciton transitions FXA (Gamma(7c)-Gamma(u)(7v)), FXB (Gamma(7c)-Gamma(9v)), and FXC (Gamma(7c)-Gamma(l)(7v)) and the longitudinal-optical phonon replicas of FXB and FXC of ZnMnO films have been clearly observed in the R spectra. The parameters describing the activation energy and the temperature dependence of the transition energy and broadening have been extracted by fitting the experimental R and PL spectra. The spectral data of ZnMnO films not only show the deterioration of crystalline quality with increasing Mn composition fraction but also indicate the Mn clustering caused by Mn atom segregation.
A new series resistance and mobility extraction method by BSIM model for nano-scale MOSFETs
(2006)
Chen, William P. N.
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Su, P.
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Wang, J. S.
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Lien, C. H.
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Chang, C. H.
Analysis of strain relaxation in GaAs/InGaAs/GaAs structures by spectroscopy of relaxation-induced states
(2007-02-01)
Chen, J. F.
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Chiang, C. H.
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Hsieh, P. C.
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Wang, J. S.
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電子物理學系
Strain relaxation in GaAs/In0.2Ga0.8As/GaAs structures is investigated by analyzing relaxation-induced traps. Strain relaxation is shown to cause carrier depletion by the induction of a 0.53 eV trap in the top GaAs layer, a 0.13 eV trap in the InGaAs layer, and a 0.33 eV trap in the neighboring lower GaAs layer. The 0.53 eV trap which exhibits a logarithmic function of transient capacitance is attributed to threading dislocations. The 0.33 eV trap exhibits an exponential transient capacitance, suggesting a GaAs point defect as its origin. Given its activation energy, it is assigned to the EL6 in GaAs, commonly considered to be As-i-V-Ga complexes. This trap and the 0.13 eV trap are regarded as the same, since their energy difference is comparable to the optically determined conduction-band offset. The spatial location of this trap correlates with that of misfit dislocations. Accordingly, the production of this trap is determined from the mechanism of strain relaxation. A likely mode of strain relaxation is deduced from the locations of these traps. (c) 2007 American Institute of Physics.
Carrier Dynamics in Self-Assembled CdTe Stranski-Krastanow Quantum Dots Grown on ZnSe by Molecular Beam Epitaxy
(2008-11-01)
Yang, C. S.
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Chin, K. F.
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Lai, J. Y.
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Luo, C. W.
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Chou, W. C.
Self-assembled CdTe/ZnSe Stranski-Krastanow quantum-dot (QD) structures, which have a CdSe-like precursor-layer (PCL) between CdTe quantum dots and ZnSe matrix, were grown by molecular beam epitaxy. The carrier dynamics of the structures was studied by photoluminescence (PL) and time-resolved photoluminescence (TRPL) measurements. The temperature-dependent PL spectra revealed that there is a carrier transformation from small dots to larger dots via the precursor layer. Temperature-dependent PL measurements verify the existence of the QD excited excitonic state in 5.0 mono-layer (ML) coverage. In 0.6 ML coverage, the TRPL spectra exhibited a double-exponential decay process, as the detection energy at PCL emission energy. The faster decay time is corresponded to the carrier lifetime in PCL, the slower decay time exhibits the carrier in small QD. However, in 5.0 ML coverage, a faster and slower decay time represents the carrier lifetime in QD excited state for larger QD and the carrier lifetime in QD ground state for smaller QD.
Catalyst-free highly vertically aligned ZnO nanoneedle arrays grown by plasma-assisted molecular beam epitaxy
(2009-11-01)
Wang, J. S.
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Yang, C. S.
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Chen, P. I.
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Su, C. F.
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Chen, W. J.
This work describes the growth of highly vertically aligned ZnO nanoneedle arrays on wafer-scale catalyst-free c-plane sapphire substrates by plasma-assisted molecular beam epitaxy under high Zn flux conditions. The photoluminescence spectrum of the as-grown samples reveals strong free exciton emissions and donor-bound exciton emissions with an excellent full width at half maximum (FWHM) of 1.4 meV. The field emission of highly vertically aligned ZnO nanoneedle arrays closely follows the Fowler-Nordheim theory. The turn-on electric field was about 5.9 V/A mu m with a field enhancement factor beta of around 793.
Effect of nitrogen contents on the temperature dependence of photoluminescence in InGaAsN/GaAs single quantum wells
(2006-07-01)
Lai, Fang-I
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Kuo, S. Y.
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Wang, J. S.
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Kuo, H. C.
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Wang, S. C.
A series of InGaAsN/GaAs single-quantum wells (SQWs) with N contents varied from 0% to 5.3% were grown by molecular-beam epitaxy using a solid As and a nitrogen plasma sources. The impact of nitrogen concentration on the optical properties, as determined by the temperature dependence of photoluminescence (PL), of a 6 nm SQW was investigated. In the low-temperature region, a pronounced temperature-dependent S-shaped peak position was observed in PL spectra while increasing the nitrogen concentration. Quenching behavior reveals that the defect-related nonradiative processes might be enhanced in the highly nitrogen incorporated samples and thus influence the recombination dynamics. In addition, the evolution of the peak position of the InGaAsN/GaAs samples was in agreement with the empirical Varshni model in the high-temperature region. A significant reduction in the temperature dependence of the emission peak position is analyzed as well, and further confirms the prediction of proposed band anticrossing model of the electronic structure of III-N-V alloys. (c) 2006 American Vacuum Society.
Effect of ZnSe partial capping on the ripening dynamics of CdSe quantum dots
(2007-02-19)
Lai, Y. J.
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Yang, C. S.
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Chen, W. K.
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Lee, M. C.
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Chang, W. H.
The ripening dynamics of CdSe quantum dots (QDs) partially capped with ZnSe layer are investigated. Atomic force microscopy (AFM) images show that the ripening of QDs is dramatically accelerated by depositing a ZnSe partial capping layer. The driving force of ripening enhancement is attributed to the increasing strain energy with capping thickness. For a ZnSe partial capping layer of below 3 ML, photoluminescence exhibits a clear redshift with increasing ZnSe monolayers. It is attributed to the size of the CdSe QD increases with ZnSe partial capping, in a manner that is consistent with the results of the AFM study. (c) 2007 American Institute of Physics.
Efficient energy transfer from InGaN quantum wells to Ag nanoparticles
(2013)
Shu, G. W.
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Chiu, C. H.
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Huang, L. T.
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Lin, T. N.
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Yang, C. C.
Nonradiative energy transfer from an InGaN quantum well to Ag nanoparticles is unambiguously demonstrated by the time-resolved photoluminescence. The distance dependence of the energy transfer rate is found to be proportional to 1/d(3), in good agreement with the prediction of the dipole interaction calculated from the Joule losses in acceptors. The maximum energy-transfer efficiency of this energy transfer system can be as high as 83%.
Electron emission properties of relaxation-induced traps in InAs/GaAs quantum dots and the effect of electronic band structure
(2007-08-15)
Chen, J. F.
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Wang, J. S.
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電子物理學系
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Department of Electrophysics
The electron-emission properties of relaxation-induced traps in InAs/GaAs quantum dots (QDs) are studied in detail using capacitance-voltage (C-V) profiling and bias-dependent deep-level transient spectroscopy. Strain relaxation is shown to induce a threading-dislocation-related trap in the top GaAs layer and a misfit-dislocation-related trap near the QD. The threading trap decreases its electron-emission energy from 0.63 to 0.36 eV from sample surface toward the QD, whereas the misfit trap gradually increases its electron-emission energy from 0.28 to 0.42 eV from near the QD toward the GaAs bottom layer, indicating that both traps near the QD have lower electron-emission energies. Hence, the emission-energy change is attributed to the related traps across the QD interface where a band offset exists. The C-V profiling at 300 K shows extended carrier depletion near the QD. As temperature is increased, an electron-emission peak emerges at the QD followed by a prominent peak, suggesting that the trap responsible for the prominent peak lies in energy below the QD electron ground state. From a simulation, this trap is identified to be the misfit trap located at the QD and at the observed emission energy below the GaAs conduction band. Based on the energy location of this trap, we deduce a possible mode of strain relaxation. (C) 2007 American Institute of Physics.
Evidence for the electron trap state associated with N-rich clusters in InGaAsN/GaAs quantum wells
(2007-06-13)
Chen, J. F.
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Hsieh, P. C.
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Hsiao, R. S.
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Wang, J. S.
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Chi, J. Y.
An electron trap state has been found to appear in InGaAsN/GaAs quantum wells ( QWs) as a result of composition fluctuation. Evidence of composition fluctuation is shown by photoluminescence spectra which display an additional low-energy emission due to local regions of N-rich clusters. Enhancing composition fluctuation leads to undulated InGaAsN/GaAs interface with dot-like islands. The capacitance-voltage profiling shows an additional peak following the QW electron ground state peak, suggesting the presence of an electron trap state below the QW electron ground state. The emission properties of this trap state are similar to those of quantum dots immersed in a well. Enhancing composition fluctuation can cause an energy downward shift and spectral broadening of this electron trap state, suggesting an increase in island size and fluctuations of the size and composition. Thus, it is deduced that the electron trap state originated from the N-rich clusters in the well behaving like quantum dots. Upon modulation, the electrons are thermally activated from this trap state to the QW electron ground state and subsequently emitted to the GaAs bottom electrode.
Exploring the Development and Complements of the Smart Grid Industry between Taiwan and China
(2013)
Wang, J. S.
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Yin, C. Y.
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Lin, K. C.
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Shyu, J. Z.
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科技管理研究所
At present, many countries devote a lot of resources to develop "smart grid", including Taiwan and China. To establish a smart grid industry at the ground of the back-end management system, the most important subsystems are the smart meter, meter data management system, and energy information communication technology. This study mainly applied the industrial portfolio matrix composed with the industry life cycle and the industry value chain (industrial technology capability phase) to analyze the subsystem industries and its positions. Analysis results showed that the two sides have significant development in the smart meter subsystem industry, however, not in the other two, meter data management system and energy information communication technology subsystems. It proves that the two sides are still in the initial stage in the two subsystem industries.
Formation of a precursor layer in self-assembled CdTe quantum dots grown on ZnSe by molecular beam epitaxy
(2007-09-26)
Yang, C. S.
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Wang, J. S.
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Lai, Y. J.
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Luo, C. W.
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Chen, D. S.
The growth mode of CdTe quantum dots ( QDs) grown on highly lattice-mismatched ZnSe buffer was investigated. CdTe QDs ( 0.6 to 5.0 mono-layers ( MLs)) were deposited on the Se-stabilized ZnSe buffer layers using an alternating supply of Cd and Te atomic sources. Cross-sectional transmission electron microscopy and photoluminescence ( PL) measurements revealed the existence of a CdSe-like two-dimensional precursor layer ( PCL). The prominent difference in the temperature-dependent PL peak shift was associated with the emissions from the respective CdSe PCL and CdTe QDs. In addition, the PL excitation measurement demonstrated the existence of the first QD excited excitonic state.
Improving Performance of InGaN/GaN Light-Emitting Diodes and GaAs Solar Cells Using Luminescent Gold Nanoclusters
(2009)
Yang, M. D.
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Wu, S. W.
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Shu, G. W.
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Wang, J. S.
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Shen, J. L.
We studied the optoelectronic properties of the InGaN/GaN multiple-quantum-well light emitting diodes (LEDs) and single-junction GaAs solar cells by introducing the luminescent Au nanoclusters. The electroluminescence intensity for InGaN/GaN LEDs increases after incorporation of the luminescent Au nanoclusters. An increase of 15.4% in energy conversion efficiency is obtained for the GaAs solar cells in which the luminescent Au nanoclusters have been incorporated. We suggest that the increased light coupling due to radiative scattering from nanoclusters is responsible for improving the performance of the LEDs and solar cells. Copyright (C) 2009 M. D. Yang et al.
Influence of Zn/O flux ratio and Mn-doped ZnO buffer on the plasma-assisted molecular beam epitaxy of ZnO on c-plane sapphire
(2008-10-15)
Wang, J. S.
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Yang, C. S.
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Liou, M. J.
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Wu, C. X.
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Chiu, K. C.
This work investigated the influence of Zn/O flux ratio and Mn-doped ZnO buffer layer on the epitaxial growth of ZnO grown by plasma-assisted molecular beam epitaxy on c-plane sapphire substrates. Atomic force microscopy (AFM), photoluminescence (PL) and X-ray diffraction (XRD) measurements indicated that a small amount residual strain of ZnO epilayers was further relaxed under stoichiometric growth conditions due to the better surface migration of the adatoms. Moreover, we observed that a small amount of Mn doping led to obtain a flatter surface with stronger lattice relaxation maybe due to the greatly enhanced surface migration of the adatoms. By adding a Mn-doped ZnO buffer layer the optical and electrical properties of the ZnO epilayers had significant improvement. (c) 2008 Elsevier B.V. All rights reserved.
Optical characterization of ZnMnO thin films on c-Al2O3
(2008-07-01)
Lin, H. J.
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Lin, D. Y.
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Wu, J. S.
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Chou, W. C.
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Yang, C. S.
Various optical measurement technologies have been used to characterize ZnMnO thin films with different Mn compositions grown by molecular beam epitaxy (MBE) on c-Al2O3 substrates. The lattice constant and the crystalization quality have been evaluated by using X-ray diffraction (XRD). Photoluminescence (PL) has been used to reveal the neutral-donor-bound exciton ((DX)-X-0) and to check the film's quality. Defect-related absorption signatures, in addition to near-band-edge absorption, due to the zinc vacancy and the donor-acceptor pair (DAP) have been found in the surface photovoltage spectra (SPS). Free excitonic transitions and their phonon-assisted replicas have been observed in the reflectance spectra. Our experimental results not only unveil specific optical transition energies but also indicate a rapid material deterioration when Mn incorporation goes beyond a certain amount to cause manganese segregation.
Photoluminescence studies of InAs/GaAs quantum dots covered by InGaAs layers
(2010-01-15)
Shu, G. W.
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Wang, J. S.
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Shen, J. L.
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Hsiao, R. S.
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Chen, J. F.
Photoluminescence (PL), PL excitation (PLE), and time-resolved PL were used to study effects of InGaAs layers on the optical properties of InAs/GaAs quantum dots (QDs). A rich fine structure in the excited states of confined excitons (up to n = 4 quantum states) was observed, providing useful information to study the quantum states in the InAs/GaAs QDs. A significant redshift of the PL peak energy for the QDs covered by InGaAs layers was observed, attributing to the decrease of the QD strain and the lowing of the quantum confinement. (C) 2009 Elsevier B.V. All rights reserved.
Platform-Integrated Cap and Trade with Renewable Energy Technologies
(2015-08-01)
Lin, Grace T. R.
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Wang, J. S.
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Hsieh, P. H.
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科技管理研究所
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Institute of Management of Technology
Taiwan is an island country that is technological-innovation-oriented but has scant natural resources. Taiwan addressed the emerging policy and strategic issues in renewable energy development and carbon reduction. Those themes regarding how to enhance green competitiveness for enterprises were also emphasized in particular. In this study, we looked at the related concerns, at a country level. The Delphi method was applied to select the renewable energy that meets the requirements of the environmental, economic, and energy policy goals of Taiwan. Conversely, a cooperation platform was designed to integrate the mechanism of C&T and suggested renewable energy technologies. Besides, a SWOT analysis was used to elaborate on and verify the empirically functioning aspects of the platform design. The goal of this platform is to create a new and appropriate energy business model to commercialize suitable renewable energy technologies and provide incentives in facing its energy and economic dilemmas.
Quasi-Stranski-Krastanow growth mode of self-assembled CdTe quantum dots grown on ZnSe by molecular beam epitaxy
(2007-04-01)
Yang, C. S.
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Lai, Y. J.
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Chou, W. C.
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Chen, D. S.
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Wang, J. S.
This study investigates the growth mode of highly lattice-mismatch (similar to 14%) CdTe self-assembled quantum dots grown on a ZnSe buffer-layer by molecular beam epitaxy. Two growth processes were used to prepare the samples. For the group-I samples, Te and Cd sources were alternately used to deposit a CdTe coverage layer of 0.6 to 8.0 mono-layers on a Zn-stabilized ZnSe buffer layer. The growth process of group-II samples was reversed; that is, the Cd beam was supplied first on a Se-stabilized ZnSe buffer layer. The optical spectra, including the power-dependent, time-resolved photoluminescence (PL) and PL excitation measurement, demonstrate a ZnTe-like and a CdSe-like two-dimensional precursor layer (wetting layer) in the group-I and group-II samples, respectively. Following the formation of the precursor layer, three-dimensional highly strained CdTe quantum dots were formed. Accordingly, the growth of CdTe self-assembled quantum-dot structures was attributed to the quasi-Stranski-Krastanow mode. (c) 2006 Elsevier B.V. All rights reserved.
Relaxation-induced lattice misfits and their effects on the emission properties of InAs quantum dots
(2007-09-05)
Chen, J. F.
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Wang, Y. Z.
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Chiang, C. H.
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Hsiao, R. S.
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Wu, Y. H.
Strain relaxation in InAs/InGaAs quantum dots (QDs) is shown to introduce misfits in the QD and neighboring GaAs bottom layer. A capacitance -voltage profiling shows an electron accumulation peak at the QD with a long emission time, followed by additional carrier depletion caused by the misfits in the GaAs bottom layer. The emission-time increase is explained by the suppression of tunneling for the QD excited states due to the additional carrier depletion. As a result, electrons are thermally activated from the QD states to the GaAs conduction band, consistent with observed emission energies of 0.160 and 0.068 eV which are comparable to the confinement energies of the QD electron ground and first-excited states, respectively, relative to the GaAs conduction band. This is in contrast to non-relaxed samples in which emission energy of 60 meV is observed, corresponding to the emission from the QD ground state to the first-excited state.