Browsing by Author "Wang, JH"

Now showing 1 - 3 of 3

Effects of Ni thickness and reflow times on interfacial reactions between Ni/Cu under-bump metallization and eutectic Sn-Pb solder in flip-chip technology
(2003-02-01)
Huang, CS
;
Duh, JG
;
Chen, YM
;
Wang, JH
;
材料科學與工程學系
Flip-chip interconnection technology plays a key role in today's electronics packaging. Understanding the interfacial reactions between the solder and under-bump metallization (UBM) is, thus, essential. In this study, different thicknesses of electroplated Ni were used to evaluate the phase transformation between Ni/Cu under-bump metallurgy and eutectic Sn-Pb solder in the 63Sn-37Pb/Ni/Cu/Ti/Si3N4/Si multilayer structure for the flip-chip technology. Interfacial reaction products varied with reflow times. After the first reflow, layered (Ni1-x,Cu-x)(3)Sn-4 was found between solder and Ni. However, there were two interfacial reaction products formed between solders and the UBM after three or more times reflow. The layered (Ni1-xCux)(3)Sn-4 was next to the Ni/Cu UBM. The islandlike (Cu1-y,Ni-y)(6)Sn-5 was formed between (Ni,Cu)(3)Sn-4 and solders. The amounts of (Cu1-y,Ni-y)(6)Sn-5 intermetallic compound (IMC) could be related to the Ni thickness and reflow times. In addition, the influence of Cu contents on phase transformation during reflow was also studied.
Experimental and theoretical studies of the rate coefficients of the reaction O(P-3)+HCl at high temperatures
(2002-10-31)
Hsiao, CC
;
Lee, YP
;
Wang, NS
;
Wang, JH
;
Lin, MC
Rate coefficients of the reaction O(P-3) + HCl in the temperature range 1093-3197 K were determined using a diaphragmless shock tube. O atoms in the ground electronic P-3 states were generated either by photolysis Of SO2 with a KrF excimer laser at 248 nm or by pyrolysis of N2O with the shock wave. Their concentrations were monitored via atomic resonance absorption excited by emission from a microwave-discharged mixture of O-2 and He. Rate coefficients determined in this work show non-Arrhenius behavior, with values consistent with previously reported. measurements for T < 1486 K; they fit well with the equation k(1)(T) = (9.27 +/- 0.03) X 10(-24) T3.67+/-0.18 exp[-(1030 +/- 160)/T] cm(3) molecule(-1) s(-1); listed errors represent one standard deviation in fitting. Theoretical calculations at the CCSD(T)/6-311 +G(d, p) level locate a bent (3)A" (TS1) and a linear (3)A' (TS3) transition state characterized previously. On the basis of the results computed by CCSD(T)/ 6-311 +G(3df,2p)//CCSD(T)/6-311 +G(d,p), the rate coefficients predicted with conventional transition-state theory, including Eckart-tunneling corrections and with variational transition-state theory including zero- and small-curvature tunneling corrections, all agree satisfactorily with experimental observations.
Superresolution structure optical disk with semiconductor-doped glass mask layer containing CdSe nanoparticles
(2006-02-01)
Yeh, TT
;
Wang, JH
;
Hsieh, TE
;
Shieh, HPD
;
材料科學與工程學系
In this work, we demonstrate a distinct superresolution phenomenon and signal properties of an optical disk with a semiconductor-doped glass (SDG) mask layer containing CdSe nanoparticles. It was found that the 69 nm marks could be consistently retrieved at reading power (P-r) = 4 mW with carrier-to-noise ratio (CNR) = 13.56 dB. The signals were clearly resolved with CNRs nearly equal to 40 dB at P-r = 4 mW when the recorded marks were larger than 100 nm. The cyclability test indicated that the CdSe-SiO2 SDG layer might serve as a stable and reliable optical mask layer in 10(5) readout cycles.