Browsing by Author "Wang, RJ"

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Electronic transport properties of alpha-TiAl alloys
(2005-10-10)
Zhang, DL
;
Liu, SM
;
Jing, XN
;
Luo, JL
;
Zhang, XG
The electrical resistivity, thermal conductivity, and thermopower of alpha-TiAl alloy samples with A1 content from 0 at.% to 10 at.% are measured from room temperature down to liquid helium temperature. It is found that with the increase in A1 content the single phonon scattering contribution to the resistivity remains nearly constant, but the multiphonon scattering contribution monotonously increases. This provides an alternative explanation of resistivity saturation to the shunt-resistor model. The Wiedemann-Ranz law holds for the whole temperature range, allowing the separation of the electron and phonon contributions to the thermal conductivity. The data from samples with different doping levels enable us to separate the band and the scattering terms in the thermopower.
High-performance poly-Si TFTs with fully Ni-self-aligned silicided S/D and gate structure
(2006-04-01)
Kuo, PY
;
Chao, TS
;
Wang, RJ
;
Lei, TF
;
電子工程學系及電子研究所
In this letter, fully Ni self-aligned silicided (fully Ni-salicided) source/drain (S/D) and gate polycrystalline silicon thin-film transistors (FSA-TFTs) have been successfully fabricated on a 40-nm-thick channel layer. Experimental results show that the FSA-TFTs give increased ON/OFF current ratio, improved subthreshold characteristics, less threshold voltage rolloff, and larger field-effect mobility compared with conventional TFTs. The FSA-TFTs exhibit small S/D and gate parasitic resistance and effectively suppress the floating-body effect and parasitic bipolar junction transistor action. The characteristics of the FSA-TFTs are suitable for high-performance driving TFTs with good output characteristics and large breakdown voltage.