Browsing by Author "Wang, S. M."

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The structural and optical properties of InN nanodots grown with various V/III ratios by metal-organic chemical vapor deposition
(2009-07-22)
Fu, S. F.
;
Wang, S. M.
;
Lee, L.
;
Chen, C. Y.
;
Tsai, W. C.
Self-assembled InN nanodots have been prepared at 650 degrees C with various V/III ratios from 500 to 30 000 by metal-organic chemical vapor deposition (MOCVD). It is found that the dot density and morphological size as well as the optical properties all display drastic changes at V/III = 12000. Generally, denser and smaller InN nanodots with higher emission energy and narrower linewidth were obtained when growth was conducted at V/III ratios slightly lower than 12 000 as compared to those at higher V/III ratios. The physical properties of our MOCVD-grown InN nanodots are sensitive to the surface structure and the morphology is very similar to molecular beam epitaxially grown GaN and InN films, which may be used as a guide to optimize the InN growth.