Browsing by Author "Wang, Sheng-Chun"

Now showing 1 - 9 of 9

Comprehensive Noise Characterization and Modeling for 65-nm MOSFETs for Millimeter-Wave Applications
(2010-04-01)
Wang, Sheng-Chun
;
Su, Pin
;
Chen, Kun-Ming
;
Liao, Kuo-Hsiang
;
Chen, Bo-Yuan
Using an external tuner-based method, this paper demonstrates a complete millimeter-wave noise characterization and modeling up to 60 GHz for 65-nm MOSFETs for the first time. Due to channel length modulation, the channel noise continues to increase and remains the most important noise source in the millimeter-wave band. Our experimental results further show that, with the downscaling of channel length, the gate resistance has more serious impact on the high-frequency noise parameters than the substrate resistance even in the millimeter-wave frequency.
Investigation of High-Frequency Noise Characteristics in Tensile-Strained nMOSFETs
(2011-03-01)
Wang, Sheng-Chun
;
Su, Pin
;
Chen, Kun-Ming
;
Chen, Bo-Yuan
;
Huang, Guo-Wei
For the first time, the high-frequency noise behavior of tensile-strained n-channel metal-oxide-semiconductor field-effect transistors, including their temperature dependency, is experimentally examined. Our experimental results show that with similar saturation voltages, the strained device is found to have larger channel noise than the control device at the same bias point. For given direct-current power consumption, however, due to enhanced transconductance, the strained device has better small-signal behaviors (higher f(t) and f(max)) and noise characteristics (smaller NF(min) and R(n)) than the control device.
Investigation of Temperature-Dependent High-Frequency Noise Characteristics for Deep-Submicrometer Bulk and SOI MOSFETs
(2012-03-01)
Wang, Sheng-Chun
;
Su, Pin
;
Chen, Kun-Ming
;
Chen, Bo-Yuan
;
Huang, Guo-Wei
The temperature dependence of high-frequency noise characteristics for deep-submicrometer bulk and silicon-on-insulator (SOI) MOSFETs has been experimentally examined in this paper. With the downscaling of the channel length, our paper indicates that the power spectral density of the channel noise (S-id) of the bulk MOSFET becomes less sensitive to temperature due to the smaller degradation of the channel conductance at zero drain bias g(d0) as temperature rises. We also show that the SOI-specific floating-body and self-heating effects would result in higher white-noise gamma factor. Finally, for both the bulk and SOI MOSFETs, since transconductance g(m) significantly decreases as temperature increases, their minimum noise figure NFmin and equivalent noise resistance R-n would degrade with increasing temperature.
On the RF extrinsic resistance extraction for partially-depleted SOI MOSFETs
(2007-05-01)
Wang, Sheng-Chun
;
Su, Pin
;
Chen, Kun-Ming
;
Lin, Chien-Ting
;
Liang, Victor
We have investigated the radio frequency (RF) extrinsic resistance extraction for partially-depleted (PD) silicon-on-insulator (SOI) metal-oxide-semiconductor field effect transistors (MOSFETs). Although the thick buried oxide in SOI devices can block the substrate coupling, the SOI neutral-body coupling effect is significant for RF applications. An equivalent circuit considering this effect has been proposed. Based on this equivalent circuit, a new model capturing the frequency dependence of extrinsic resistances has been derived. After considering the impact of quasi-neutral body, we have developed a physically accurate RF extrinsic resistance extraction methodology for PD SOI MOSFETs.
Radio-Frequency Small-Signal and Noise Modeling for Silicon-on-Insulator Dynamic Threshold Voltage Metal-Oxide-Semiconductor Field-Effect Transistors
(2009-04-01)
Wang, Sheng-Chun
;
Su, Pin
;
Chen, Kun-Ming
;
Huang, Sheng-Yi
;
Hung, Cheng-Chou
This paper presents small-signal and noise modeling for radio-frequency (RF) silicon-on-insulator (SOI) dynamic threshold voltage (DT) metal-oxide-semiconductor field-effect transistors (MOSFETs). The inherent body parasitics, such as source- and drain-side junction capacitances, and access body resistance have been incorporated in this model. In addition, the analytical equations useful for parameter extractions are derived. The modeling results show good agreements with the measured data both in RF small-signal and noise aspects up to 12 GHz. Besides, we have made comparisons of important model parameters for DT and standard MOSFETs. The extracted parameters show reasonable trend with respect to applying voltages and channel lengths, which reveals the accuracy of the extraction results using our proposed method. (C) 2009 The Japan Society of Applied Physics
RF extrinsic resistance extraction considering neutral-body effect for partially-depleted SOI MOSFETs
(2006)
Wang, Sheng-Chun
;
Su, Pin
;
Chen, Kun-Ming
;
Lin, Chien-Ting
;
Liang, Victor
Temperature dependence of high frequency noise behaviors for RF MOSFETs
(2008-08-01)
Wang, Sheng-Chun
;
Su, Pin
;
Chen, Kun-Ming
;
Lin, Chien-Ting
;
Liang, Victor
For the first time, the temperature dependences of radio frequency (RF) metal oxide semiconductor field effect transistors' intrinsic noise currents, including the induced gate noise current (i(g)), channel noise current (i(d)) and their correlation noise current, are experimentally investigated. The power spectral densities for the induced gate noise current and correlation noise current are found to rise as temperature increases, and decline for the channel noise current. Moreover, by using van der Ziel's noise model, our experimental results show that, besides ambient temperature, the channel conductance is the main factor dominating the RF noise behaviors. Finally, bias dependence results are also presented.
Temperature Dependences of RF Small-Signal Characteristics for the SOI Dynamic Threshold Voltage MOSFET
(2009)
Wang, Sheng-Chun
;
Su, Pin
;
Chen, Kun-Ming
;
Huang, Sheng-Yi
;
Hung, Cheng-Chou
In this paper, the temperature dependences of RF small-signal characteristics for the SOI dynamic threshold voltage (DT) MOSFET (- 25. to 125 degrees C) are examined under different bias points. The temperature effects on the intrinsic small-signal parameters and body-related parasitics are also investigated. Moreover, along with our proposed expressions for the cut-off and maximum oscillation frequencies (f(t) and f(max)), the impact of these intrinsic parameters and parasitics on the temperature behaviors of the DT MOSFET's RF performance can be well captured and described.
Temperature-Dependent RF Small-Signal and Noise Characteristics of SOI Dynamic Threshold Voltage MOSFETs
(2010-09-01)
Wang, Sheng-Chun
;
Su, Pin
;
Chen, Kun-Ming
;
Liao, Kuo-Hsiang
;
Chen, Bo-Yuan
In this paper, temperature-dependent RF small-signal and noise characteristics of silicon-on-insulator (SOI) dynamic threshold voltage (DT) MOSFETs are experimentally examined. In the low-voltage regime, both the cutoff and maximum oscillation frequencies (f(t) and f(max)) tend to increase with temperature. In addition, the inherent body-related parasitics and the series resistance have much more impact on f(max) than f(t). Besides, we found that the noise stemmed from the body resistance (R(b)) would contribute to the output noise current, and degrade the minimum noise figure (NF(min)). Our study may provide insights for RF circuit design using advanced SOI DT MOSFETs.