Browsing by Author "Wang, Shui Jinn"

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A Nonvolatile InGaZnO Charge-Trapping-Engineered Flash Memory With Good Retention Characteristics
(2010-03-01)
Su, Nai-Chao
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Wang, Shui Jinn
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Chin, Albert
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電子工程學系及電子研究所
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Department of Electronics Engineering and Institute of Electronics
We report an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor nonvolatile memory (NVM). This NVM shows a large 1.2-V extrapolated ten-year memory window, along with low 10-V/-12-V program/erase voltage, fast 1-ms/100-mu s speed, and good endurance. This was achieved using a charge-trap-engineered structure and high-kappa layers.
High-Mobility InGaZnO TFTs Using Atmospheric Pressure Plasma Jet Technique and 248-nm Excimer Laser Annealing
(2014-10-01)
Wu, Chien Hung
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Huang, Hau Yuan
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Wang, Shui Jinn
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Chang, Kow Ming
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電子工程學系及電子研究所
With the advantages of low apparatus cost, better suitability for large-scale fabrication, and low thermal budget, the nonvacuum atmospheric pressure plasma jet technique and 248-nm excimer laser annealing were employed for the fabrication of indium gallium zinc oxide (InGaZnO) thin-film transistors. Devices with a 150-mJ/cm(2) laser demonstrated excellent electrical characteristics with reduced OFF-current, including a high channel mobility of 21.2 cm(2)/V-s, the ON-OFF current ratio of 7 x 10(5), and a subthreshold swing of 0.48 V/decade. The improvements are attributed to the increase of oxygen vacancies in the InGaZnO channel and the reduction of traps at the ZrO2/InGaZnO interface and InGaZnO bulk.