Browsing by Author "Wang, Szu-Ping"

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Hybrid light-emitting devices by incorporating WO3 nanorod arrays as the electron transport layer and PEIE as the buffer layer
(2018-01-01)
Chang, Chun-Kai
;
Wang, Szu-Ping
;
Yang, Sheng-Hsiung
;
Puaud, Apolline
;
Thien-Phap Nguyen
In this research, we demonstrate novel inverted light-emitting devices based on n-typed tungsten trioxide (WO3) nanostructures. Two different types of WO3 nanostructures, including nanocluster layer (NCL) and nanorod arrays (NAs), were grown on the indium-tin oxide (ITO) substrates by the hydrothermal method. An ultra-thin polyethylenimine ethoxylated (PEIE) layer was deposited on top of WO3 nanostructures as the buffer layer for improving device performance. Inverted devices with the configuration of ITO/WO3 NCL or NAs/PEIE/poly(2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylene vinylene)/poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate)/WO3 film/Au were constructed and evaluated. The best device based on WO3 NAs with height of 300 nm showed a max brightness of 3079 cd/m(2) and current efficiency of 0.22 cd/A. Our observation and results open up new opportunities to fabricate hybrid light-emitting devices. (C) 2017 Elsevier Ltd. All rights reserved.
Novel hybrid light-emitting devices based on MAPbBr(3) nanoplatelets:PVK nanocomposites and zinc oxide nanorod arrays
(2018-01-01)
Wang, Szu-Ping
;
Chang, Chun-Kai
;
Yang, Sheng-Hsiung
;
Chang, Che-Yu
;
Chao, Yu-Chiang
In this research, we demonstrate inverted perovskite light-emitting devices (PeLEDs) based on zinc oxide nanorod arrays (ZnO NAs) as the electron transport layer and methylammonium lead bromide nanoplatelets (MAPbBr(3) NPLs) as the emissive material for the first time. The polyethyleneimine ethoxylated (PEIE) was inserted between the ZnO NAs and the MAPbBr(3) NPLs layer to reduce the energy barrier and improve the electron injection efficiency. Besides, different weight ratios of poly(N-vinylcarbazole) (PVK) were blended with MAPbBr(3) NPLs to make evenly dispersed nanocomposite films, thereby enhancing the performance of devices. Meanwhile, the photoluminescence of MAPbBr(3) NPLs:PVK nanocomposite film was increased due to reduced self-quenching and prolonged carrier lifetime. Inverted PeLEDs with the configuration of ITO/PEIE-modified ZnO NAs/MAPbBr(3) NPLs: PVK/TFB/Au were fabricated and evaluated, using TFB as the hole transport layer. The current density of the devices containing PVK matrix was significantly suppressed compared to those without PVK. Herein, the best device revealed a max brightness of 495 cd m(-2) and a low turn-on voltage of 3.1 V that shows potential use in light-emitting applications.