Browsing by Author "Wang, T. Y."

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A Circuit Level Variability Prediction of Basic Logic Gates in Advanced Trigate CMOS Technology
(2014)
Hsieh, E. R.
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Hung, C. M.
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Wang, T. Y.
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Chung, Steve S.
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Huang, R. M.
Variability has been one of the major scaling issues in advancing the CMOS technology. In this paper, a variation model from the device level to circuit level has been proposed and demonstrated on advanced trigate FinFETs. First, a simple and accurate transport model was developed to model variability at the device level. It was then implemented in Spice and the calculation of variation of basic logic gate building block was demonstrated with only W/L and the slopes, A(vt), A(gm), in the Pelgrom plot, as inputs. Finally, a unified simple analytic form was developed to predict the variability of various basic logic circuits regardless of the number of devices and the complexity of circuits.
High Efficiency Silicon Solar Cells with Bilayer Passivation Structure
(2009)
Sun, W. C.
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Chang, W. L.
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Chen, C. H.
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Du, C. H.
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Wang, T. Y.
lThe effects of passivation on monocrystalline silicon solar cells were investigated. Al(2)O(3) and SiO(2) films, prepared by atomic layer deposition and thermal oxidation, respectively, were used as passivation layers. Passivation using a monolayer (SiO(2)) yielded a cell efficiency of 17.5%. However, the Al(2)O(3)/SiO(2) bilayer structure drastically increased cell efficiency to 20.1%. Quantum efficiency results revealed a significant improvement in the IR range, suggesting that bilayer passivation was effective on the back of a solar cell in providing a high energy conversion efficiency. (C) 2009 The Electrochemical Society. [DOI: 10.1149/1.3194252] All rights reserved.