Browsing by Author "Wang, TK"

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Characterization and modeling of out-diffusion of cesium, manganese and zinc impurities from deep ultraviolet photoresist
(2000)
Ko, FH
;
Wang, MY
;
Wang, TK
;
Yang, CC
;
Huang, TY
The novel radioactive tracer technique was applied to investigate the migration of cesium, manganese and zinc impurities from deep ultraviolet photoresist into underlying substrate. Two important process parameters, viz., baking temperatures and substrate types (i.e., bare silicon, polysilicon, silicon oxide and silicon nitride), were evaluated. Our results indicated that the migration ratios were all below 6%, irrespective of baking temperatures and substrate types. The substrate types did not appear to strongly affect the metallic impurity out-diffusion from deep ultraviolet photoresist. However, solvent and/or water evaporation due to temperature change was found to have a significant effect on metal migration. The net driving force of impurity changes with temperature and the impurity diffusion can be classified into four types. Based on the proposed types, the obtained migration ratios can be realized. A new model, together with a new parameter, was proposed to describe the out-diffusion behavior of impurities from deep ultraviolet photoresist. The diffusion profile of photoresist was depicted based on diffusion equations and the migration ratios. This model could explain the migration ratios of metallic impurities in photoresist layers under various baking conditions.
Characterization and modeling of out-diffusion of manganese and zinc impurities from deep ultraviolet photoresist
(1999-09-01)
Wang, MY
;
Ko, FH
;
Wang, TK
;
Yang, CC
;
Huang, TY
The radioactive tracer technique was applied to investigate the out-diffusion of manganese and zinc impurities from deep-ultraviolet (DUV) photoresist. Two important process parameters, viz., baking temperature and the type of substrate (i.e., bare silicon, polysilicon, oxide, or nitride), were evaluated. Our results indicated that diffusion ratios were ail below 6%, irrespective of the substrate type and baking temperature. The substrate type did not appear to strongly affect the metallic impurity out-diffusion from DUV photoresist. However, solvent evaporation was found to have a significant effect on impurity diffusion. A new model, together with a new parameter, was proposed to describe the out-diffusion behavior of impurities from DUV photoresist. This model could explain the diffusion ratio of metallic impurities in photoresist layers under various baking conditions. The effectiveness of various wet cleaning recipes in removing metallic impurities such as manganese and zinc was also studied. It was found that (i) bath life due to temperature change can considerably affect the cleaning efficiency, and (ii) hot water immersion can effectively dissolve the impurities from the wafer surface. (C) 1999 The Electrochemical Society. S0013-4651(98)11-080-7. All rights reserved.
Characterization and modeling of the metal diffusion from deep ultraviolet photoresist and silicon-based substrate
(2001-05-01)
Wang, TK
;
Wang, MY
;
Ko, FH
;
Tseng, CL
;
奈米中心
The radioactive tracer technique was applied to investigate the out-diffusion of the transition metals (Cu, Fe and Co) from deep ultraviolet (DUV) photoresist into underlying substrate. Two important process parameters, viz., baking temperatures and substrate types (i.e., bare silicon, polysilicon, silicon oxide and silicon nitride), were evaluated. Results indicate that the out-diffusion of Co is insignificant, irrespective of the substrate type and baking temperature. The Out diffusion of Cu is significant for substrates of bare silicon and polysilicon but not for silicon oxide and nitride; for Fe, the story is reversed. The substrate type appears to strongly affect the diffusion, while the baking temperature does not. Also, the effect of solvent evaporation was found to play an important role in impurity diffusion. Using the method of numerical analysis, a diffusion profile was depicted in this work to describe the out-diffusion of metallic impurities from photoresist layer under Various baking conditions. In addition, the effectiveness of various wet-cleaning recipes in removing metallic impurities such as Cu, Fe and Co was also studied using the radioactive tracer technique. Among the six cleaning solutions studied, SC2 and SPM are the most effective in impurity removal. An out-diffusion cleaning model was first proposed to describe the cleaning process. A new cleaning coefficient, h(T), was suggested to explain the cleaning effect. The cleaning model could explain the tracer results. (C) 2001 Elsevier Science Ltd. All rights reserved.
Evaluation of cleaning efficiency with a radioactive tracer and development of a microwave digestion method for semiconductor processes
(2000-02-29)
Lu, JK
;
Ko, FH
;
Chu, TC
;
Sun, YC
;
Wang, MY
A radioactive tracer technique was applied to investigate the effectiveness of various wet cleaning recipes in removing metallic impurities such as sodium, iron and cesium. The effects of solution temperatures and substrate types were studied. The mechanisms of the electrochemical segregation of metallic impurities between the substrate and cleaning solution were examined. The enthalpy of oxide formation and the effect of adsorption were the two reasons for the presence of surface metal impurities in the cleaning solutions. Our results indicated that SC2 and DHF can effectively remove the metallic impurities at 47 and 82 degrees C, while SPM and BOE are only effective at 82 degrees C. The gravimetric method was successfully implemented to evaluate the open-focused microwave digestion efficiency for anti-reflective coating and photoresist (PR) samples. By following the established microwave digestion method and inductively coupled plasma mass spectrometric determination, the detection limits (DLs) obtained for multi-elements were in the ng ml(-1) and sub-ng ml(-1) levels. Except for calcium, the spike recoveries of the metals were in the range 82-121% for the lithographic samples. The analytical results were found to be in reasonably good agreement with literature values, and the lithographic sample throughput can achieve up to 3.5 samples per hour for the analysis of 13 elements. (C) 2000 Elsevier Science B.V. All rights reserved.
Evaluation of impurity migration and microwave digestion methods for lithographic materials
(1999)
Ko, FH
;
Hsiao, LT
;
Chou, CT
;
Wang, MY
;
Wang, TK
In the section of incoming quality (IQC) or quality reliability analysis (QRA) of advanced semiconductor fabrication company, it is inevitable to regulate the strict standard for the incoming materials to ensure the reliability. In our radioactive tracer study, it is interestingly found the various amounts of metal and trace element impurities in the lithographic materials may migrate into the substrate. Based on the complex organic matrix in lithographic materials such as bottom anti-reflective coating (BARC), I-line resist and DUV resist, it is not easy to direct determine the multi-elements by the instrumentation. In this work, the lithographic materials are first decomposed by the close-vessel and open-focused microwave oven, and the digest is evaporated to incipient dryness. After adding water, the sample solutions are used either for evaluating the completeness of the digestion process by UV-VIS spectrometer, or for the determination of eleven elements using inductively coupled plasma mass spectrometry (ICP-MS). In addition, the digestion efficiency is also evaluated by the weight of total dry residual after various digestion recipes. By the complementary digestion method, the method detection limits for analytes can be achieved at lower than ng/g level. For evaluation of data accuracy, the results obtained by the two independent degestion methods are in good agreement. Moreover, the spiking recovery tests for all the elements are of 70 to 130%. According to the microcontamination control limit predicted by the SIA roadmap, the established method can meet the requirements for the quality control of lithographic materials in the future ten years.
Evaluation of metal migration and determination of trace metals after microwave digestion for lithographic materials
(1999-12-01)
Ko, FH
;
Wang, MY
;
Wang, TK
;
奈米中心
;
Nano Facility Center
The radioactive tracer technique was applied to investigate the migration of cesium and zinc impurities from bottom antireflective coating (BARC) and photoresist (PR) into underlying substrate. The effects of normal baking temperatures and substrate types were studied. Our results indicated that BARC has higher migration ratios than PR, irrespective of the substrate types and normal baking temperatures. The substrate type did not appear to strongly affect the metal migration ratios. However, water and/or solvent evaporation due to temperature change was found to have a significant effect on metal migration. The diffusion profiles of BARC and PR were depicted based on diffusion equations and the migration ratios. Both the UV/visible spectrometric and the gravimetric methods were successfully implemented to evaluate the feasibility of closed-vessel microwave digestion efficiency for BARC and PR samples. By following the established microwave digestion method and the inductively coupled plasma mass spectrometer (ICPMS) determination, the detection limits obtained for multielements were in the ppb and sub-ppb levels. Except for calcium, the spike recoveries of metals ranged from 91 to 132% and 87 to 125% for BARC and PR, respectively. The analytical results were found to be in reasonably good agreement with the Literature values.
Migration-adsorption mechanism of metallic impurities out of chemically amplified photoresist onto silicon-based substrates
(2000-10-01)
Yang, CC
;
Ko, FH
;
Wang, MY
;
Wang, TK
;
Wu, SC
The radioactive tracer technique was applied to investigate the migration and adsorption behaviors of metallic impurities (i.e., Ba, Cs, Zn, and Mn) out of chemically amplified photoresist onto silicon-based underlying substrates. Two important process parameters, i.e., baking temperatures and substrate types (e.g., bare silicon, polysilicon, oxide, and nitride) were evaluated. Our results indicated that the transition metals (Zn and Mn) have lower migration ratios than alkali metal (Cs) and alkaline earth metal (Ba), irrespective of the substrate types and baking temperatures. The transition metals form stable complexes with the coexisting solvents and/or hydrolysis species in the photoresist layer. The size of the metal complex, the drag force in solvent evaporation, and the baking process were found to have significant effects on impurity migration. A new model, together with the metal migration in the chemically amplified photoresist and the subsequent adsorption onto the underlying substrate, was proposed to explain the pathway of the metal migration. This model could explain the migration ratios of metallic impurities out of the photoresist layer onto the substrate surface. (C) 2000 The Electrochemical Society. S0013-4651(00)01-026-0. All rights reserved.