Browsing by Author "Wang, Ta-Wei"

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60-GHz 0.18-mu m CMOS Schottky-Diode Ring-Mixer Down-Converter
(2014)
Hsiao, Yu-Chih
;
Meng, Chinchun
;
Wang, Ta-Wei
;
Huang, Guo-Wei
;
電機學院
A 60-GHz dual conversion down-converter based on n-type Silicon-based Schottky diodes has been demonstrated in the low-cost 0.18-mu m CMOS technology. Four Schottky diodes in the ring shape configuration with two Marchand Baluns are used for the RF mixer while a double-balanced resistive mixer is used as the second down-converted IF mixer. As a result, the 60-GHz dual-conversion down-converter has conversion gain around 6 dB and noise figure around 18 dB in the RF frequency range of 57 similar to 64 GHz. The total power consumption is 32.8 mW at 2.5 V.
60-GHz Dual-Conversion Down-/Up-Converters Using Schottky Diode in 0.18 mu m Foundry CMOS Technology
(2012-06-01)
Wei, Hung-Ju
;
Meng, Chinchun
;
Wang, Ta-Wei
;
Lo, Tai-Lin
;
Wang, Chia-Ling
Due to the benefits of Schottky diodes, 0.18-mu m CMOS technology is being promoted for millimeter wave applications. In this paper, 60-GHz dual-conversion down-/up-converters using Schottky diodes are realized by using 0.18-mu m foundry CMOS technology. A CoSi2-Si Schottky diode, fabricated on a lower doped N-well by blocking the threshold voltage adjustment implant, has a lower reverse leakage current and a better ideality factor. Thus, it is ideal for the 60-GHz sub-harmonic mixer design. Two new types of Schottky-diode mixers, a down-conversion sub-harmonic mixer with a dual-band lump-distributed phase-inverter rat-race coupler and an up-conversion sub-harmonic mixer with a trifilar transformer, are realized and employed at the high-frequency conversion stage of the dual-conversion architecture to achieve small size and broadband isolations. The silicon-based Schottky diode with a low turn-on voltage offers great advantage in LO pumping power, especially for an antiparallel diode pair structure. In our Schottky-diode sub-harmonic mixers, the required LO power is only 1 dBm. The dual-conversion down-converter achieves 5-dB conversion gain and 19 dB noise figure under V-dd = 2.5 V and I-dd = 22 mA, and the dual-conversion up-converter, with V-dd = 2.5 V and I-dd = 26 mA, attains greater than 40-dB sideband rejection and -1 dB conversion gain over the whole 60-GHz bandwidth.
60-GHz Dual-Conversion Down-Converter Using Schottky Diode and Dual-Band Rat-Race Coupler in Standard 0.18-mu m CMOS Process
(2013)
Hsiao, Yu-Chih
;
Meng, Chinchun
;
Wei, Hung-Ju
;
Wang, Ta-Wei
;
Huang, Guo-Wei
A 60 GHz dual-conversion down-converter with a microwave mixer in the first conversion and analog mixers in the second conversion is demonstrated in 0.18-mu m CMOS technology. The first down-converted sub-harmonic mixer consists of a rat-race coupler with the dual-band Chebyshev response and Schottky diodes in anti-parallel configuration. The high cut-off frequency of a Schottky diode helps lowering the conversion loss and noise figure of a microwave mixer. A double balanced resistive mixer is used at the second down-converted mixer. As a result, the conversion gain is about 6 dB in the frequency range of 45 similar to 67 GHz and the IF bandwidth is over 1 GHz. IP1dB is about -5-dBm and IIP3 is about 5-dBm at 45 similar to 67 GHz. The single sideband noise figure is 21 dB at 60 GHz. The total power consumption is 71 mW at 2.5 V.