Browsing by Author "Wang, Teng-Yu"

Now showing 1 - 2 of 2

Fabricating 43-mu m-Thick and 12% Efficient Heterojunction Silicon Solar Cells by Using Kerfless Si(111) Substrates
(2015-01-01)
Du, Chen-Hsun
;
Chen, Chien-Hsun
;
Wang, Teng-Yu
;
Hsiao, Jui-Chung
;
Yeh, Chun-Ming
A 43-mu m-thick Si(111) substrate was obtained using the stress-induced lift-off method with a screen-printed metal paste layer as the stress-generation layer. The reflection of the metal-removed side of the Si(111) substrate was lower than that of the exfoliated side because of high surface roughness resulting from the reaction between the metal paste and the silicon substrate at 700 degrees C. After aggressive etching with an alkaline solution for the peeled silicon substrate, the efficiency of the heterojunction silicon solar cell was improved from 0.87% to 12%. (C) The Author(s) 2015. Published by ECS. All rights reserved.
High-reliability gate driver on array using noise sharing of precharging node for thin film transistor-liquid crystal display application
(1970-01-01)
Zheng, Guang-Ting
;
Liu, Po-Tsun
;
Du, Chia-Heng
;
Wang, Teng-Yu
;
顯示科技研究所
A hydrogenated amorphous silicon (a-Si:H) thin-film transistor (TFT) gate driver with negative bias stress on precharging node for noise sharing with high-reliability 10.7-in. automotive display has been proposed. The proposed circuit is composed of precharging block, pull-up and pull-down block, and noise-free block. The precharging block not only starts up the gate driver but also reduces noise with 33% duty cycle. Duplicate output signals are responsible for turning on next stage to decrease the loading of output of gate line. Moreover, negative bias voltage recovering of TFTs could be created by setting another lower voltage source to lower the threshold voltage degradation of TFTs. According to lifetime test results, the proposed gate driver of 708 stages passes the extreme temperature range test (90 degrees C and -40 degrees C) for simulation and -40 degrees C for measurement and remains stable over 800 h at 90 degrees C test. Finally, this design is successfully demonstrated in a 10.7-in. HD (1280 x RGB x 720) TFT-LCD panel.