Browsing by Author "Wang, Tong-Yi"

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Dynamic negative bias temperature instability in low-temperature poly-Si thin-film transistors
(2007)
Chen, Chih-Yang
;
Wang, Tong-Yi
;
Ma, Ming-Wen
;
Chen, Wei-Cheng
;
Lin, Hsiao-Yi
Dynamic negative bias temperature instability in p-channel low-temperature poly-Si thin-film transistors was studied in this paper. The degradation of the devices was found to be voltage and temperature dependent. In addition, the frequency and duty ratio of the gate pulse affects the degree of the device degradation. The mechanism of the device degradation was investigated, and a physical model is proposed to explain the mechanism.
Electrical enhancement of polycrystalline silicon thin-film transistors using fluorinated silicate glass passivation layer
(2008-02-01)
Chang, Chia-Wen
;
Deng, Chih-Kang
;
Huang, Jiun-Jia
;
Wang, Tong-Yi
;
Lei, Tan-Fu
Polycrystalline silicon thin-film transistors (poly-Si TFTs) with a fluorinated silicate glass (FSG) passivation layer are proposed and demonstrated in this study. Experimental results reveal that the electrical characteristics can be improved by the incorporation of appropriate amounts of fluorine in the poly-Si film. The poly-Si TFTs with a FSG passivation layer show a high on-current, a low off-state gate-induced drain leakage (GIDL) current, a high field-effect mobility, and a suppressed kink effect, compared with the poly-Si TFTs with an undoped SiO(2) passivation layer. The presence of incorporated fluorine atoms from the FSG passivation layer in the poly-Si channel film can passivate the trap states at the grain boundaries. Furthermore, the incorporation of fluorine atoms can form stronger Si-F bonds near the source and drain sides to enhance the immunity against hot-carrier stress. In addition, the proposed poly-Si TFTs are easy to fabricate, have a low production cost, and are realized using a process compatible with modern TFT manufacturing technology.
Performance and reliability improvement for poly-Si TFTs using fluorinated silicate glass inter-layer-dielectric passivation
(2007)
Chang, Chia-Wen
;
Wu, Tin-Wei
;
Wang, Tong-Yi
;
Chang, Che-Lun
;
Lee, Jam-Wem
Polycrystalline silicon thin-film transistors (poly-Si TFTs) with fluorinated silicate glass (FSG) inter-layer dielectric (ILD) passivation layer were proposed and demonstrated in this study. The presence of outdiffused fluorine atoms from FSG layer can eliminate Si dangling bonds at the grain boundaries near the drain side. The proposed short channel poly-Si TFTs with FSG ILD passivation have a slightly improved on-current, a obviously suppressed serious kink-effect, and a remarkably reduced off-leakage current than those with undoped SiO2 ILD passivation. Furthermore, the incorporation of fluorine atoms in poly-Si film can also form stronger Si-F bonds at drain side to enhance the immunity to hot carrier stress. Besides, the proposed TFTs structure is simple, low cost, and process compatible with present TFTs manufacturing technology.