Browsing by Author "Wang, Tsun-Ming"

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Direct growth of a 40 nm InAs thin film on a GaAs/Ge heterostructure by metalorganic chemical vapor deposition
(2014-09-01)
Yu, Hung-Wei
;
Wang, Tsun-Ming
;
Nguyen, Hong-Quan
;
Wong, Yuen-Yee
;
Tu, Yung-Yi
In this paper, the authors directly grew an InAs thin film (40 nm) by metalorganic chemical vapor deposition on GaAs/Ge substrates by using flow-rate modulation epitaxy with an appropriate V/III ratio. The growth of a high-quality InAs thin film with periodic 90 degrees misfit dislocations was related to a uniform monolayer In atom distribution at the InAs/GaAs interface. The In monolayer effectively minimized the difference between surface energy and strain energy, producing a stable interface during material growth. The authors also found that a tightly controlled V/III ratio can improve the quality of the InAs islands on the GaAs/Ge heterostructures, though it is not the key factor in InAs thin-film growth. (C) 2014 American Vacuum Society.