Browsing by Author "Wang, Wei-Chun"

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CdSe/ZnS core-shell quantum dot assisted color conversion of violet laser diode for white lighting communication
(2019-12-01)
Wang, Wei-Chun
;
Wang, Huai-Yung
;
Chen, Tzu-Yu
;
Tsai, Cheng-Ting
;
Cheng, Chih-Hsien
By color-converting the violet laser diode (VLD) with a cadmium selenide and zinc sulfide (CdSe/ZnS) core-shell-quantum dot (QD) doped polydimethylsiloxane (PDMS) film, the VLD+CdSe/ZnS core-shell-QD transferred white-light with improved color rendering index (CRI) is demonstrated for high-speed indoor visible lighting communication. To facilitate hue saturation value (HSV) of the VLD +CdSe/ZnS core-shell-QD white-lighting module, dual-sized CdSe/ZnS core-shell-QDs with two luminescent wavelengths centered at 515 and 630 nm are doped into the PDMS. The CdSe/ZnS core-shell-QD doped PDMS phosphor with the optimized thickness of 2.5 mm serves as the beam divergent color-converter, which not only excites red (R) and green (G) fluorescence to detune the correlated color temperature (CCT) and CRI of the mixed red/green/violet (RGV) white-light, but also remains the residual VLD signal for data transmission. With a divergent angle of 127 degrees, such a VLD + CdSe/ZnS core-shell-QD can deliver cold white-light with a CCT of 6389 K and a CRI of 63.3 at Commission International de l'Eclairage coordinate of 0.3214, 0.2755. Most important, the residual VLD light component is relatively weak with its wavelength out of the peak optical sensitivity region of the human retina centered at 441 nm. The directly encoded VLD+CdSe/ZnS core-shell-QD white light successfully carries the 16-quadrature amplitude modulation (QAM) discrete multitone data, which supports the maximal transmission data rate of 9.6 Gbit/s with a bit error ratio (BER) of 3.59 x 10(-3).
High performance negative capacitance field-effect transistor featuring low off-state current, high on/off current ratio, and steep sub-60 mV dec(-1) swing
(2020-04-01)
Liu, Chien
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Chen, Hsuan-Han
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Tung, Yi-Chun
;
Wang, Wei-Chun
;
Huang, Zhong-Ying
In this work, we demonstrated that the 5-nm-thick HfAlOx negative capacitance transistor (NCFET) with optimized Al doping can achieve a minimum 33 mV dec(-1) subthreshold swing (SS), an ultralow l(off) of 7.44 fA mu m(-1), and a high l(on)//l(off) ratio of 1.9 x 10(8). The NC switching with sub-60 mV dec(-1) SS can be implemented from V-DS - 0.2 V to 0.8 V due to an ultralow off-state leakage current. The experimental results reveal that well-controlled Al doping in HfAlOx not only reduces off-state leakage of the transistor, but also improves the ferroelectric NC effect to achieve a sub-60 mV dec-1 switching under a favorably low sub-1 voltage. This scaled HfAlOx NCFET with optimized Al doping and fluorine defect passivation shows the great potential for the application of low power logic devices. (C) 2020 The Japan Society of Applied Physics
Investigation of Phase Transformation in HfO2 Ferroelectric Capacitor by Means of a ZrO2 Capping Layer
(2019-01-01)
Liu, Kuan-Wei
;
Chen, Hsuan-Han
;
Huang, Zhong-Ying
;
Wang, Wei-Chun
;
Fan, Yu-Chi
In this paper, the ferroelectric polarization effect of ZrO2 capping layer on HfO2 NUM capacitor was investigated. Based on crystallinity analysis, the phase transformation from monoclinic to orthorhombic phase in HfO2 film can be induced by a thin ZrO2 capping layer. The thickness of ZrO2 capping layer plays an important role in the ferroelectric polarization of HfO2 MFM capacitor. Compared to mixed HfZrO film, the stacked ZrO2/HfO2 film shows the advantage for suppressing the leakage issue during high-temperature ferroelectric phase transition.
Stabilizing Ferroelectric Domain Switching of Hafnium Aluminum Oxide Using Metal Nitride Electrode Engineering
(2019-09-17)
Liu, Chien
;
Tung, Yi-Chun
;
Tseng, Chih-Yang
;
Wang, Wei-Chun
;
Chen, Hsuan-Han
In this work, we comprehensively investigated the metal-electrode stress engineering on HfAlO metal-ferroelectric-metal capacitor. According to experimental results, we confirm that high-nitrogen tantalum-nitride electrode with good chemical stability not only mitigates the anti-ferroelectric property and gate leakage current, but also improves the wake-up effect and endurance cycling characteristics, which shows the great potential for future applications of low-power ferroelectric memories. (c) 2019 The Electrochemical Society.