Browsing by Author "Wang, Y. Z."

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A novel scrape-applied method for the manufacture of the membrane-electrode assembly of the fuel-cell system
(2009-12-01)
Wu, S. D.
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Chou, C. P.
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Peng, R. G.
;
Lee, C. H.
;
Wang, Y. Z.
This study investigates the transfer of the scrape-applied method from the electrodes of a lithium battery to the membrane-electrode assembly of fuel cells, including Proton Exchange Membrane Fuel Cells and Direct Methanol Fuel Cell. Three methods are commonly used to manufacture lithium battery electrodes: the roller-applied method, the spraying-applied method, and the scrape-applied method. This study develops novel scrape-applied equipment for lithium battery electrodes. This method is novel and suitable for producing fuel cell, better than other traditional methods. In this study, the stability of coating process was tested by measuring the weight and thickness of a dry electrode. The stability and reproducibility of electrode fabrication were examined by systematic data analysis. Finally, the study used a specially designed single cell composed of 16 conductive segments, which are insulated locally. The current passing through each segment was measured using Hall Effect sensors connected to the segment compartments. Based on the measured distribution of the local current in a segmented single cell, the influence of flooding and stoichiometry variation of feed gas was discussed in terms of electrochemical reaction rate. The experimental results serve as an important basis for future research in this field, which hold potential benefits to the academia and the industry.
Relaxation-induced lattice misfits and their effects on the emission properties of InAs quantum dots
(2007-09-05)
Chen, J. F.
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Wang, Y. Z.
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Chiang, C. H.
;
Hsiao, R. S.
;
Wu, Y. H.
Strain relaxation in InAs/InGaAs quantum dots (QDs) is shown to introduce misfits in the QD and neighboring GaAs bottom layer. A capacitance -voltage profiling shows an electron accumulation peak at the QD with a long emission time, followed by additional carrier depletion caused by the misfits in the GaAs bottom layer. The emission-time increase is explained by the suppression of tunneling for the QD excited states due to the additional carrier depletion. As a result, electrons are thermally activated from the QD states to the GaAs conduction band, consistent with observed emission energies of 0.160 and 0.068 eV which are comparable to the confinement energies of the QD electron ground and first-excited states, respectively, relative to the GaAs conduction band. This is in contrast to non-relaxed samples in which emission energy of 60 meV is observed, corresponding to the emission from the QD ground state to the first-excited state.