Browsing by Author "Wang, Yi-Kai"

Now showing 1 - 2 of 2

Analysis of pentacene thin film transistors in different atmospheres
(2005)
Wang, Yu-Wu
;
Cheng, Horng-Long
;
Wang, Yi-Kai
;
Hu, Tang-Hsiang
;
Ho, Jia-Chong
This investigation addresses the electrical properties of pentacene-based thin film transistors in air, dry air and high vacuum. A potential barrier model was applied to explain the gate dependent field effect mobility behavior. The results show the trap density in air higher than that in a vacuum.
High-performance bottom-contact devices based on an air-stable n-type organic semiconductor N,N-bis (4-trifluoromethoxybenzyl)-1,4,5,8-naphthalene-tetracarboxylic di-imide
(2007-05-21)
Kao, Chia-Chun
;
Lin, Pang
;
Lee, Cheng-Chung
;
Wang, Yi-Kai
;
Ho, Jia-Chong
N,N-bis(4-trifluoromethoxybenzyl)-1,4,5,8-naphthalene-tetracarboxylic di-imide was applied to organic semiconductors for bottom-contact thin-film transistors. The carrier mobility was 1.6x10(-2) cm(2) V-1 s(-1), the threshold voltage (V-T) was +5.5 V, and the on/off current ratio was 8.6x10(5). Devices without any further surface treatments were tested in an ambient environment. The threshold voltage shift (Delta V-T) was verified by gate bias stress measurements. A prototype compound, N,N-bis(4-trifluoromethylbenzyl)naphthalene-1,4,5,8-tetracarboxylic di-imide, shows direct correlation to the bottom-contact device with the varied molecular structure. (c) 2007 American Institute of Physics.