Browsing by Author "Wang, Yu-Wen"

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High-Speed and High-Power GaSb Based Photodiode for 2.5 mu m Wavelength Operations
(2016-01-01)
Chao, Rui-Lin
;
Wun, Jhih-Min
;
Wang, Yu-Wen
;
Chen, Yi-Han
;
Bowers, J. E.
By using partially depleted Ga0.8In0.2As0.16Sb0.84 absorber in GaSb based photodiodes for 2.5 mu m wave length operation, such device achieves high-speed and high-saturation current (3.6 mA/6 GHz) performances with low dark current (0.7 mu A at -2V). Device modeling results suggest that the internal carrier response time limits its dynamic performance.
Type-II GaAs0.5Sb0.5/InP Uni-Traveling Carrier Photodiodes With Sub-Terahertz Bandwidth and High-Power Performance Under Zero-Bias Operation
(2017-02-15)
Wun, Jhih-Min
;
Chao, Rui-Lin
;
Wang, Yu-Wen
;
Chen, Yi-Han
;
Shi, Jin-Wei
We successfully demonstrate ultrafast uni-traveling carrier photodiodes (PD) with sub-terahertz bandwidth (similar to 170 GHz) and high-power performance under zero bias and at 1.55-mu m optical wavelength operation. By using a type-II (GaAs0.5Sb0.5/InP) absorption-collector interface and inserting an n-type (1 x 1018 cm(-3)) charge layer in the collector, the current blocking (Kirk) effect can be greatly minimized. A stack of undoped Al-x In0.52Ga0.48-x As layers with different Aluminum mole fractions (x: 0.2 to 0.08) and bandgaps is adopted as the collector layer. This graded-bandgap design can provide a built-in electric field and further shorten the internal collector transit time. The demonstrated PD structure achieves a 3-dB optical-to-electrical bandwidth of 170 GHz and subterahertz output power -11.3 dBm at 170 GHz, a record among all the reported zero-bias PDs.