Browsing by Author "Wang, Yung Yun"

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Forming tapered pattern by Cu electrodeposition through mask on Ni seed layer for thin-film transistors
(2006-11-01)
Jenq, Shrine Ning
;
Wan, Chi Chao
;
Wang, Yung Yun
;
Li, Hung Wei
;
Liu, Po Tsun
The fabrication of Cu gates for thin-film transistors (TFTs) by electrodeposition through mask on a Ni layer has been developed. After pretreatment in acid sulfate solution, a Cu deposit acquires the property of good adhesion on a Ni layer. Organic additives [e.g., poly(ethylene glycol) (PEG), bis(3-sodiumsulfopropyl) disulfide (SPS)] were used to create the desired tapered shape of the deposited Cu pattern on a Ni layer. Furthermore, a multilayer Cu gate for TFTs was fabricated after the selective etching of the nickel layer. The new method provides an alternative wet process for fabricating Cu gates for TFTs.
Tapered Cu pattern metallization by electrodeposition through mask
(2006)
Jenq, Shrane Ning
;
Wan, Chi Chao
;
Wang, Yung Yun
;
Li, Hung Wei
;
Liu, Po Tsun
A tapered shape of Cu pattern by electrodeposition through mask is preferred for fabricating metal line on thin-film transistors (TFTs). The influence of individual organic additive [polyethylene glycol (PEG), bis-3-sodiumsulfopropyl disulfide (SPS)] on the sidewall shape of the Cu pattern was identified. A compromising effect shows up when both PEG and SPS are added owing to the competition of the behavior of two different organic additives during Cu electrodeposition. Therefore, a method has been developed for the fabrication of copper pattern used in TFTs, which forms a tapered pattern in one single Cu deposition step. (c) 2006 The Electrochemical Society.