Browsing by Author "Wang, Z. R."

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Implementation of Functionally Complete Boolean Logic and 8-bit Adder in CMOS Compatible 1T1R RRAMs for In-Memory Computing
(2018-01-01)
Wang, Z. R.
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Li, Y.
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Su, Y. T.
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Zhou, Y. X.
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Yin, K. S.
RRAM is a promising candidate to construct in-memory computing architecture which can break through the von Neumann bottleneck. Taking advantage of the CMOS compatible 1T1R RRAM, functionally complete Boolean logics can be realized within two steps in a single unit that can suppress sneak pass problem and avoid cascading problem partially. In addition, an 8-bit pre-calculation adder with low computation complexity is designed and demonstrated experimentally to verify the feasibility and efficiency of 1T1R based in-memory computing architecture, which is applicable to future energy-efficient information processing systems.
Oxide-Based RRAM: Unified Microscopic Principle for both Unipolar and Bipolar Switching
(2011)
Gao, B.
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Kang, J. F.
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Chen, Y. S.
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Zhang, F. F.
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Chen, B.
A unified microscopic principle is proposed to clarify resistive switching behaviors of transition metal oxide based resistive random access memories (RRAM) for the first time. In this unified microscopic principle, both unipolar and bipolar switching characteristics of RRAM are correlated with the distribution of localized oxygen vacancies in the oxide switching layer, which is governed by the generation and recombination with dissociative oxygen ions. Based on the proposed microscopic principle, an atomistic simulation method is developed to evaluate critical memory performance, and successfully conduct the device optimization. The experimental data are well in line with the developed simulation method.