Browsing by Author "Wang Shing-Chung"
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Item type:Item, SEMICONDUCTOR OPTICAL DEVICE HAVING AN AIR MEDIA LAYER AND THE METHOD FOR FORMING THE AIR MEDIA LAYER THEREOF(2013-06-13) ;LU Tien-Chang ;Huang Huei-Min ;Kuo Hao-ChungWang Shing-ChungA method for fabricating air media layer within the semiconductor optical device is provided. The step of method includes a substrate is provided, a GaN thin film is formed on the substrate, a sacrificial layer is formed on the GaN thin film, and a nitride-containing semiconductor layer is formed on the sacrificial layer. The semiconductor optical device is immersed with an acidic solution to remove the portion of sacrificial layer to form an air media layer around the residual sacrificial layer.Item type:Item, Semiconductor optical device having an air media layer and the method for forming the air media layer thereof(2015-03-31) ;Lu Tien-Chang ;Huang Huei-Min ;Kuo Hao-ChungWang Shing-ChungA method for fabricating air media layer within the semiconductor optical device is provided. The step of method includes a substrate is provided, a GaN thin film is formed on the substrate, a sacrificial layer is formed on the GaN thin film, and a nitride-containing semiconductor layer is formed on the sacrificial layer. The semiconductor optical device is immersed with an acidic solution to remove the portion of sacrificial layer to form an air media layer around the residual sacrificial layer.Item type:Item, SOLID STATE LIGHTING LUMINAIRE AND A FABRICATION METHOD THEREOF(2013-09-05) ;Wang Shing-Chung ;Kuo Hao-Chung ;Chen Hsin-ChuChen Kuo-JuA solid state lighting luminaire, which comprises a solid state light source, an encapsulated structure, and a first phosphor, is provided. The encapsulated structure encapsulates the solid state light source and has an outside illuminating surface. The first phosphor is patterned to cover a portion of the outside illuminating surface for down-converting the illumination from the solid state light source.Item type:Item, Surface-emitting laser device(2011-07-05) ;Chen Shih-Wei ;Lu Tien-Chang ;Kuo Hao-ChungWang Shing-ChungA surface-emitting laser device includes: a substrate; a low refractive index layer with a refractive index nL and disposed on the substrate; a light emitting layered structure with a refractive index nH, where nH>nL, the light emitting layered structure being formed on the low refractive index layer and having first and second semiconductor layers and a multi-quantum well (MQW) disposed between the first and second semiconductor layers and capable of generating photons having a wavelength λ0; and a two-dimensional photonic crystal (2DPC) formed in the light emitting layered structure and having optical nanostructures arranged into a periodic pattern with a lattice constant a. The nanostructures extend from the first semiconductor layer through the MQW. The 2DPC has a normalized frequency, which is defined as a/λ0, ranging from 0.25 to 0.70.