Browsing by Author "Wanga, T"

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Effects of process and gate doping species on negative-bias-temperature instability of p-channel MOSFETs
(2004-02-01)
Lee, DY
;
Huang, TY
;
Lin, HC
;
Chiang, WJ
;
Huang, GW
The effects of poly-Si gate doping type and species as well as thermal treatments on negative-bias-temperature instability (NBTI) of p-channel metal-oxide-semiconductor field effect transistors (MOSFETs) were investigated. We found that devices with n(+)-poly-Si gate depict a smaller threshold voltage shift after bias-temperature stressing, compared to their p(+)-poly-Si-gated counterparts. By carefully controlling the thermal budget to suppress boron penetration, NBTI can be reduced by fluorine incorporation in p(+)-poly-Si-gated devices. Finally, NBTI is found to be aggravated in devices subjected to H-2 postmetal-annealing, highlighting the important role of hydrogen bonds. (C) 2004 The Electrochemical Society.