Browsing by Author "Watanabe Hiroshi"
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Item type:Item, APPLICATION CIRCUIT AND OPERATION METHOD OF SEMICONDUCTOR DEVICE(2013-01-03) ;Shirota RiichiroWatanabe HiroshiAn application circuit and an operation method of a semiconductor device are provided. A leakage current among a control gate diffusion layer, a source diffusion layer and a drain is reduced by adjusting biases applied on a double well region, so as to reduce the product cost and improve the accuracy of a battery-less electronic timer that uses the semiconductor device.