Browsing by Author "Wei, Hung-Ju"

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11.8 GHz GaInP/GaAs HBT dynamic frequency divider using HLO-FF technique
(2008-10-01)
Wei, Hung-Ju
;
Meng, Chinchun
;
Chang, YuWen
;
Huang, Guo-Wei
;
電信工程研究所
An integrated GaInP/GaAs heterojunction bipolar transistor (HBT) dynamic frequency divider based on HLO-FF (high-speed latching operating flip-flop) structure is demonstrated rot 4.1-11.8 GHz. In this experiment, et conventional static,frequency divider using the same cut-off-frequency device is also fabricated for comparison. By biasing the HBT transistors around the peak of f(T) and optimizing the I(read)/I(latch) tire maximum operating frequency of the HLO-FF is greatly improved date to higher slew-rate and smaller voltage swing. The speed of HLO-FF is faster about 48% than that of static structure. The core current is 13 mA cot the supply voltage of 5V. (C) 2005 Wiley Periodicals, Inc.
12 similar to 18 GHz Resistive Mixer with a Miniature Marchand Balun using Standard CMOS Process
(2009)
Wei, Hung-Ju
;
Meng, Chinchun
;
Tsung, Kuan-Chang
;
Huang, Guo-Wei
;
電信工程研究所
A 12 similar to 18 GHz fundamental resistive mixer is demonstrated using standard 0.13 mu m CMOS technology. A Marchand Balun directly on lossy silicon substrate is integrated with the resistive mixer to generate equal-amplitude and out-of-phase signal for LO pumping. The size of the Ku-band Marchand balun only occupies 478 mu m x 250 mu m due to higher silicon dielectric constant. The measured conversion loss of the resistive mixer is around 22 dB under f(IF)=3 GHz and P(LO)=6 dBm. The small required LO power reveals that the Marchand balun does not suffer serious loss from silicon substrate. The miniature technique makes passive components more compact and easier to be integrated with IC circuit design.
16.4 GHz SiGe BiCMOS Sub-Harmonic Mixer With Reactive I/Q Generators in RF and LO Paths
(2009)
Tseng, Sheng-Che
;
Syu, Jin-Siang
;
Su, Jen-Yi
;
Wei, Hung-Ju
;
Meng, Chinchun
This paper demonstrates a high-frequency 0.35-mu m SiGe BiCMOS sub-harmonic downconverter with reactive in-phase and quadrature-phase (I/Q) generators. Two reactive I/Q generators are integrated in our work to provide differential quadrature RI and LO signals. The I/Q sub-harmonic downconverter with single-ended LO, RI, and IF (IM) ports has a conversion gain of 1 dB, IP(1dB) of -10 dBm, IIP(3) of 0 dBm and IIP(2) of 21 dBm at 16.4 GHz. The magnitude and phase errors between the I and Q channels are 1.34% and 0.6 degrees, respectively. The dc power consumption of this I/Q mixer without output buffers is approximately 5 mW.
17-GHz pHEMT Gilbert Single-Quadrature Downconverter With Polyphase Filters for Image Rejection
(2010-01-01)
Wei, Hung-Ju
;
Meng, Chinchun
;
Su, Jen-Yi
;
Yu, Sheng-Wen
;
Huang, Guo-Wei
A 17-GHz Gilbert single-quadrature down-converter (SQDC) with polyphase filters is successfully demonstrated using 0.15-mu m pseudomorphic high electron mobility transistor (pHEMT) technology for the first time to the best of our knowledge. Thanks to the semi-insulating GaAs substrate and an advanced technology, the image rejection Gilbert mixer works well at high frequencies. A polyphase filter at the LO stage is employed to generate precisely differential quadrature signals and a four-stage polyphase filter at the IF stage can filter out the unwanted image signal to achieve image rejection. From 10-MHz to 90-MHz IF frequencies, a 30-dB image rejection ratio is achieved when RF and LO frequencies are designed around 17 GHz. The Gilbert SQDC has a 5.5-dB conversion gain, 0-dBm IP1db, and 16-dBm IIP3.
60-GHz Dual-Conversion Down-/Up-Converters Using Schottky Diode in 0.18 mu m Foundry CMOS Technology
(2012-06-01)
Wei, Hung-Ju
;
Meng, Chinchun
;
Wang, Ta-Wei
;
Lo, Tai-Lin
;
Wang, Chia-Ling
Due to the benefits of Schottky diodes, 0.18-mu m CMOS technology is being promoted for millimeter wave applications. In this paper, 60-GHz dual-conversion down-/up-converters using Schottky diodes are realized by using 0.18-mu m foundry CMOS technology. A CoSi2-Si Schottky diode, fabricated on a lower doped N-well by blocking the threshold voltage adjustment implant, has a lower reverse leakage current and a better ideality factor. Thus, it is ideal for the 60-GHz sub-harmonic mixer design. Two new types of Schottky-diode mixers, a down-conversion sub-harmonic mixer with a dual-band lump-distributed phase-inverter rat-race coupler and an up-conversion sub-harmonic mixer with a trifilar transformer, are realized and employed at the high-frequency conversion stage of the dual-conversion architecture to achieve small size and broadband isolations. The silicon-based Schottky diode with a low turn-on voltage offers great advantage in LO pumping power, especially for an antiparallel diode pair structure. In our Schottky-diode sub-harmonic mixers, the required LO power is only 1 dBm. The dual-conversion down-converter achieves 5-dB conversion gain and 19 dB noise figure under V-dd = 2.5 V and I-dd = 22 mA, and the dual-conversion up-converter, with V-dd = 2.5 V and I-dd = 26 mA, attains greater than 40-dB sideband rejection and -1 dB conversion gain over the whole 60-GHz bandwidth.
60-GHz Dual-Conversion Down-Converter Using Schottky Diode and Dual-Band Rat-Race Coupler in Standard 0.18-mu m CMOS Process
(2013)
Hsiao, Yu-Chih
;
Meng, Chinchun
;
Wei, Hung-Ju
;
Wang, Ta-Wei
;
Huang, Guo-Wei
A 60 GHz dual-conversion down-converter with a microwave mixer in the first conversion and analog mixers in the second conversion is demonstrated in 0.18-mu m CMOS technology. The first down-converted sub-harmonic mixer consists of a rat-race coupler with the dual-band Chebyshev response and Schottky diodes in anti-parallel configuration. The high cut-off frequency of a Schottky diode helps lowering the conversion loss and noise figure of a microwave mixer. A double balanced resistive mixer is used at the second down-converted mixer. As a result, the conversion gain is about 6 dB in the frequency range of 45 similar to 67 GHz and the IF bandwidth is over 1 GHz. IP1dB is about -5-dBm and IIP3 is about 5-dBm at 45 similar to 67 GHz. The single sideband noise figure is 21 dB at 60 GHz. The total power consumption is 71 mW at 2.5 V.
60-GHz SiGe BiCMOS Dual-Conversion Down-Converter: Schottky Diode RF Mixer and Analog Gilbert IF Mixer with Microwave Quadrature Generator
(2016)
Kao, Jen-Chieh
;
Meng, Chinchun
;
Wei, Hung-Ju
;
Huang, Guo-Wei
;
電機工程學系
A 60 GHz dual-conversion down-converter using 0.35 mu m SiGe BiCMOS process is demonstrated in this paper. A Schottky diode ring mixer with wideband Marchand balun works as the 60-GHz RF mixer while two analog Gilbert micromixers with LO port pumped by two quadrature couplers work as IF mixers. The cut-off frequency of a Schottky diode makes a fundamental RF ring mixer possible because the series resistance of a Schottky diode is effectively reduced by the n+ buried layer in SiGe BiCMOS process. A Gilbert micromixer with an IF buffer is used to accommodate the single-ended output of the RF ring mixer. By combining these advantages, a dual-conversion down-converter is achieved. The converter has about 8 dB conversion gain, 10 GHz RF bandwidth of 50 - 60 GHz, 100 MHz IF bandwidth when LO1 power is 8 dBm and LO2 power is 2 dBm.
A 9-GHz Dual-Modulus 0.18-mu m CMOS Prescaler Using HLO-FF Technique
(2008)
Wei, Hung-Ju
;
Meng, Chinchun
;
Lin, Yi-Chen
;
Huang, Guo-Wei
;
電信工程研究所
A Chebyshev-Response Step-Impedance Phase-Inverter Rat-Race Coupler Directly on Lossy Silicon Substrate and Its Gilbert Mixer Application
(2011-04)
Wei, Hung-Ju
;
Meng, Chinchun
;
Yu, Sheng-Wen
;
Chang, Chia-Hung
;
電機工程學系
This paper focuses on the analysis and the design methodology of the step-impedance phase-inverter rat-race coupler on a silicon-based process. The issues of impedance limitation and bandwidth are discussed in detail. Our proposed concept utilizes a high silicon dielectric constant, phase-inverter structure, step-impedance technique, and Chebyshev response to make the rat-race coupler more compact (similar to 64 reduction) and highly balanced over a wide operating bandwidth. Moreover, the inter-digital coplanar stripline used in the step-impedance section effectively reduces the characteristic impedance of the transmission line for large size shrinkage and insertion-loss reduction. The demonstrated step-impedance rat-race coupler directly on silicon substrate has 6- similar to 7-dB insertion loss from 5 to 15 GHz and small variations in amplitude/phase balance. Compared with our previous work, the proposed rat-race coupler achieves a 3-dB improvement in the insertion loss. Thus, a 0.13-mu m CMOS Gilbert down-converter with a miniature phase-inverter rat-race coupler at the RF path for wideband single-to-differential signal conversion achieves a noise figure of 16 dB.
A Chebyshev-Response Step-Impedance Phase-Inverter Rat-Race Coupler Directly on Lossy Silicon Substrate and Its Gilbert Mixer Application
(2011-04)
Wei, Hung-Ju
;
Meng, Chinchun
;
Yu, Sheng-Wen
;
Chang, Chia-Hung
;
電機工程學系
This paper focuses on the analysis and the design methodology of the step-impedance phase-inverter rat-race coupler on a silicon-based process. The issues of impedance limitation and bandwidth are discussed in detail. Our proposed concept utilizes a high silicon dielectric constant, phase-inverter structure, step-impedance technique, and Chebyshev response to make the rat-race coupler more compact (similar to 64 reduction) and highly balanced over a wide operating bandwidth. Moreover, the inter-digital coplanar stripline used in the step-impedance section effectively reduces the characteristic impedance of the transmission line for large size shrinkage and insertion-loss reduction. The demonstrated step-impedance rat-race coupler directly on silicon substrate has 6- similar to 7-dB insertion loss from 5 to 15 GHz and small variations in amplitude/phase balance. Compared with our previous work, the proposed rat-race coupler achieves a 3-dB improvement in the insertion loss. Thus, a 0.13-mu m CMOS Gilbert down-converter with a miniature phase-inverter rat-race coupler at the RF path for wideband single-to-differential signal conversion achieves a noise figure of 16 dB.
A fully single-ended GaInP/GaAs HBT micromixer using an integrated active LO balun
(2008-07-01)
Wu, Tzung-Han
;
Lin, Yi-Chen
;
Meng, Chinchun
;
Wu, Tse-Hung
;
Wei, Hung-Ju
A Gilbert micromixer is demonstrated in this paper using GaInP/GaAS HBT technology. By using an on-chip active LO balun, the micromixer with the single-ended RF, LO, and IF ports is suitable for hybrid RF system applications. The port-to-port isolation has its best performance when the LO signal is balanced. The fully matched high-linearity micromixer has the conversion gain of 12dB, IP1dB of -9 dBm, IIP3 of 1 dBm when f(IF(input)) = 300 MHz, f(LO) = 3.5 GHz, and f(RF(output)) = 3.8 GHz. (C) 2008 Wiley Periodicals, Inc.
A High-Speed HBT Prescaler Based on the Divide-by-Two Topology
(2007)
Wei, Hung-Ju
;
Meng, Chinchun
;
Chang, Yuwen
;
Lin, Yi-Chen
;
Huang, Guo-Wei
This paper demonstrates the Divide-by4/5 prescalers with merged AND gates in 2 mu m GaInP/GaAs heterojunction bipolar transistor (HBT) and 035 mu m SiGe HBT technologies. By biasing the HBT near the peak transit-time frequency (f(tau)), the maximum operating frequency of a D-type flip-flop (D-FF) can be promoted. At the supply voltage of 5 V, the GaInP/GaAs prescaler operates from 30 MHz to 5.2 GHz, and the SiGe prescaler has the higher-speed performance of 1 GHz similar to 8 GHz at the cost of power consumption.
Broadband CMOS Gilbert Down-Converter Utilizing a Low-Loss Step-Impedance Rat-Race Coupler
(2009)
Wei, Hung-Ju
;
Meng, Chinchun
;
Yu, Sheng-Wen
;
電信工程研究所
;
Institute of Communications Engineering
A Broadband Gilbert Down-Converter with step-impedance rat-race coupler is demonstrated using 0.13 mu m standard CMOS technology. The proposed method utilizes higher effective dielectric-constant, phase-inverter and step-impedance techniques simultaneously to make the rat-race coupler more compact (similar to 64% reduction) and phase-balanced over a wide operating bandwidth. The down-converter has NF of 16 dB and LO-to-RF isolation of better than 35 dB. The mixer core consumes 2.9 mA at V(dd)=1.8 V.
Broadband GaInP/GaAs HBT regenerative frequency divider with active loads
(2007)
Wei, Hung-Ju
;
Meng, Chinchun
;
Chang, YuWen
;
Huang, Guo-Wei
;
電信工程研究所
An integrated GaInP/GaAs heterojunction bipolar transistor (HBT) regenerative frequency divider (RFD) with active loads is demonstrated at 4 GHz-26 GHz. In this work, the RFDs with resistive loads and active loads are fabricated in the same chip for comparison. From the measured results, the active-loading type obviously has wider operating frequency and lower input sensitivity. The f(max)/f(min) ratio of 6.5 is higher than that of general RFDs. The core power consumption is 36.7mW at the supply voltage of 5 V. The chip size is 1.0 x 1.0 mm(2).
Compact GaInP/GaAs HBT Gilbert Mixers With On-Chip Active LO Balun
(2007)
Wu, Tzung-Han
;
Lin, Yi-Chen
;
Meng, Chinchun
;
Wu, Tse-Hung
;
Wei, Hung-Ju
A Gilbert micromixer is demonstrated in this paper using GaInP/GaAs HBT technology. The RF, LO, and IF ports of the micromixer are all single-ended using the on-chip active LO balun. The port-to-port isolation has its best performance when the LO signal is balanced. The stand-along micromixer is suitable for hybrid RF system applications. The fully matched high linearity micromixer has the conversion gain of 12 dB, IP(1dB) of -9 dBm, IIP(3) of 1 dBm when input IF=300 MHz, LO=3.5 GHz and output RF=3.8 GHz.
Comparison of GaInP/GaAs HBT RFDs with resistive loads and shunt-shunt feedback active loads
(2008-02-01)
Wei, Hung-Ju
;
Meng, Chinchun
;
Chang, Yuwen
;
Huang, Guo-Wei
;
電信工程研究所
An integrated GaInP/GaAs heterojunction bipolar transistor (HBT) regenerative frequency divider (RFD) with active loads is demonstrated from 4 to 26 GHz. In this work, the RFDs with resistive loads and active loads are fabricated in the same chip for comparison. From the measured results, the active loading type obviously has wider operating frequency and lower input sensitivity. The f(max)/f(min), ratio of 6.5 is higher than that of general RFDs. The core power consumption is 36.7 mW at the supply voltage of 5 V The chip size is 1.0 x 1.0 mm(2). (c) 2007 Wiley Periodicals, Inc.
Criteria for the evaluation of linear two-port stability using two geometrically derived parameters
(2009-02-01)
Meng, Chinchun
;
Wei, Hung-Ju
;
Sun, Po-Hsing
;
電信工程研究所
;
Institute of Communications Engineering
Two geometrically derived stability parameters, mu' (or mu) and nu' (or nu), are used to analyze the stability of a two-port network. The magnitudes of both mu' (or nu) and nu' (or nu) parameters determine geometrical relations between the stability circle and the unit Smith chart in the Gamma(S) (or Gamma(L)) plane, vertical bar mu'vertical bar (or vertical bar mu vertical bar) is defined as the minimum distance from the stability circle to the origin of the unit Smith chart in the Gamma(S) (or Gamma(L)) plane, while vertical bar nu'vertical bar (or vertical bar nu vertical bar) is defined as the maximum distance. Moreover, the signs of nu' (or nu) and mu' (or mu) parameters determine which region of the stability circle is stable (inside or outside) and whether the stable region includes the origin of the Smith chart, respectively. There are totally 12 situations between the stability circle and the unit Smith chart in the Gamma(S) (or Gamma(L)) plane by using mu' (or mu) and nu' (or nu) parameters. This paper classifies 12 situations in the Gamma(S) plane and also presents the corresponding practical two-port networks.
Criteria for the evaluation of linear two-port stability using two geometrically derived parameters
(2009-02-01)
Meng, Chinchun
;
Wei, Hung-Ju
;
Sun, Po-Hsing
;
電信工程研究所
;
Institute of Communications Engineering
Two geometrically derived stability parameters, mu' (or mu) and nu' (or nu), are used to analyze the stability of a two-port network. The magnitudes of both mu' (or nu) and nu' (or nu) parameters determine geometrical relations between the stability circle and the unit Smith chart in the Gamma(S) (or Gamma(L)) plane, vertical bar mu'vertical bar (or vertical bar mu vertical bar) is defined as the minimum distance from the stability circle to the origin of the unit Smith chart in the Gamma(S) (or Gamma(L)) plane, while vertical bar nu'vertical bar (or vertical bar nu vertical bar) is defined as the maximum distance. Moreover, the signs of nu' (or nu) and mu' (or mu) parameters determine which region of the stability circle is stable (inside or outside) and whether the stable region includes the origin of the Smith chart, respectively. There are totally 12 situations between the stability circle and the unit Smith chart in the Gamma(S) (or Gamma(L)) plane by using mu' (or mu) and nu' (or nu) parameters. This paper classifies 12 situations in the Gamma(S) plane and also presents the corresponding practical two-port networks.
Flicker Noise and Power Performance of CMOS Gilbert Mixers Using Static and Dynamic Current-Injection Techniques
(2010-01-01)
Wei, Hung-Ju
;
Meng, Chinchun
;
Chien, Hsin-I
;
Lu, Hsi-Liang
;
Syu, Jin-Siang
The Gilbert Mixers using static and dynamic current-injection techniques are all implemented in 0.13 mu m CMOS technology. As the experimental results, the dynamic injection technique has higher conversion gain, less sensitivity to current injection, smaller required LO power, better noise figure and lower flicker noise when the transistor size and biasing condition are the same as that of static injection technique for a fair comparison.
High-speed divide-by-4/5 prescalers with merged and gates using gainp/gaas hbt and sige hbt technolmes
(2008-06-01)
Wei, Hung-Ju
;
Meng, Chinchun
;
Chang, YuWen
;
Lin, Yi-Chen
;
Huan, Guo-Wei
This paper demonstrates the divide-by-4/5 prescalers with merged AND gates in 2-mu m GaInP/GaAs heterojunction bipolar transistor (HBT) and 0.35-mu m SiGe HBT technologies. By biasing the HBT near the peak transit-time frequency (f(T)), the maxinnun operating frequency of a D-type flip-flop can be promoted. At the supply, voltage of 5 the GaInP/GaAs prescaler operates from 30 MHz to 5.2 GHz, and the SiGe prescaler has the higher-speed performance of 1-8 GHz at the cost of power consumption. (c) 2008 Wiley Periodicals, Inc.