Browsing by Author "Wei, Kuo-Hsiu"

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Cleaning methodology of small residue defect with surfactant in copper chemical mechanical polishing post-cleaning
(2016-11-01)
Wei, Kuo-Hsiu
;
Hung, Chi-Cheng
;
Wang, Yu-Sheng
;
Liu, Chuan-Pu
;
Chen, Kei-Wei
Advanced semiconductor manufacturing technology has adopted an alkaline solution for copper (Cu) corrosion prevention instead of the traditional acidic solution in the post-cleaning process of copper chemical mechanical polishing. Low particle and residue removal efficiency has been an issue for this process. In this study, we investigated the formation of small residue defects and the cleaning mechanism to remove these defects. The results show it is insufficient to remove the small residue defects by using the traditional process parameter tuning. Adding some friction between the pad and the wafer surface allowed the defects to be effectively reduced. (C) 2016 Elsevier B.V. All rights reserved.
Cleaning methodology of small residue defect with surfactant in copper chemical mechanical polishing post-cleaning
(2016-11-01)
Wei, Kuo-Hsiu
;
Hung, Chi-Cheng
;
Wang, Yu-Sheng
;
Liu, Chuan-Pu
;
Chen, Kei-Wei
Advanced semiconductor manufacturing technology has adopted an alkaline solution for copper (Cu) corrosion prevention instead of the traditional acidic solution in the post-cleaning process of copper chemical mechanical polishing. Low particle and residue removal efficiency has been an issue for this process. In this study, we investigated the formation of small residue defects and the cleaning mechanism to remove these defects. The results show it is insufficient to remove the small residue defects by using the traditional process parameter tuning. Adding some friction between the pad and the wafer surface allowed the defects to be effectively reduced. (C) 2016 Elsevier B.V. All rights reserved.
Effect of tungsten incorporation in cobalt tungsten alloys as seedless diffusion barrier materials
(2017-03-05)
Su, Yin-Hsien
;
Kuo, Tai-Chen
;
Lee, Wen-Hsi
;
Wang, Yu-Sheng
;
Hung, Chi-Cheng
With the increase in the aspect ratio of the interconnect features in integrated circuits, the direct electroplating of Cu on diffusion barrier without sputtered Cu seed layers is attracting more and more attention. In this study, direct electroplating of Cu onto sputtered CoW films with various W concentration in acidic CuSO4 solution is investigated. Also, the adhesion and anti-diffusion properties of the CoW thin films for Cu are explored. The results show that Cu films cannot be electrodeposited on thin Co layers due to corrosion of Co in the acidic bath. For CoW alloys, higher W concentration is found to be beneficial for suppressing corrosion of CoW films and also improving the thermal stability. However, on the surface of Cu/CoW films with high W concentration, Cu agglomeration and pin-holes were found after annealing, indicating poor adhesion between Cu and high W-content CoW alloys. In this study, CoW alloys with moderate W concentration around 50% are found to be a direct platable material which also demonstrates desirable adhesion and anti-diffusion characteristics for Cu interconnects application. (C) 2017 Elsevier B.V. All rights reserved.
The influence of abrasive particle size in copper chemical mechanical planarization
(2013-09-01)
Wei, Kuo-Hsiu
;
Wang, Yu-Sheng
;
Liu, Chuan-Pu
;
Chen, Kei-Wei
;
Wang, Ying-Lang
There are many kinds of commercial slurries used in Cu CMP. Major components include an oxidizing agent, complexing agents, inhibitors, and abrasives. We analyze the abrasive particle size by TEM and light scattering. Cu CMP polishing mechanism is also discussed under different particle size distribution. The complexing agent transportation will be the rate determining step when a small abrasive is insufficient, but the copper hydroxide removal rate will determine the overall polishing rate when the amount of smaller particles is enough. (C) 2012 Elsevier B.V. All rights reserved.