Browsing by Author "Wei, YY"

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Deep hole traps created by gamma-ray irradiation of GaInP
(2001-12-01)
Sung, WJ
;
Liu, TY
;
Yang, SL
;
Huang, KF
;
Tseng, TY
Deep hole traps, created by gamma-ray irradiation of Al/GaInP Schottky diodes grown by metal-organic chemical vapor deposition (MOCVD) were studied by using deep level transient spectroscopy (DLTS) technique. Two distinct deep hole traps, A and B, were observed in the irradiated GaInP samples, According to the analysis of trap concentration in various samples, the trap A is verified as a bulk defect located at 0.29 eV above the valance band. Meanwhile, the trap B is an interface state originated from the junctions of Al/Mg-doped GaInP contacts.
Gamma-ray induced deep electron traps in GaInP
(2001-09-01)
Sung, WJ
;
Liu, TY
;
Yang, SL
;
Huang, KF
;
Tseng, TY
Deep electron traps created by gamma-ray irradiation of Au/GaInP Schottky diodes grown by metal-organic chemical vapor deposition (MOCVD) were studied by using deep level transient spectroscopy (DLTS) technique. Three distinct deep electron traps, G1, G2 and G3, were observed in the irradiated GaInP samples. According to the analysis of trap properties in various samples. trap G1 is verified as a bulk defect located at 0.13 eV below the conduction band, while trap G2 and G3 are interface states originated from the junctions of Au/Te-doped GaInP contacts.