Browsing by Author "Wei, Yin-Chang"

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Dimension dependent immunity of X-ray irradiation on low-temperature polycrystalline-silicon TFTs
(2017-06-01)
Wei, Yin-Chang
;
Li, Yi-Chieh
;
Lee, I-Che
;
Cheng, Huang-Chung
;
電子工程學系及電子研究所
Typically, each element in a large-area flat-panel X-ray image sensor consists of a photodetector and amorphous silicon (a-Si) thin-film transistor (TFT) switches. In order to reduce noise, increase sensor dynamic range, and increase carrying capacity, the low-temperature polycrystalline-silicon (LTPS) TFTs have been proposed as a candidate to replace the a-Si TFTs. However, there are concerns regarding the impact of X-ray radiation in LTPS-TFTs, and several studies have been conducted to inquire into the same. In this paper, we show that LTPS TFTs with small channel length (<2 mu m) are almost immune to X-ray radiation. (C) 2017 The Japan Society of Applied Physics
High-Sensitivity Low-Temperature Poly-Silicon Lateral Photodetector with Ultrathin Absorption Layer via Body-Extension-Contact Structure
(2016-12)
Wei, Yin-Chang
;
Lee, I-Che
;
Cheng, Huang-Chung
;
電子工程學系及電子研究所
;
Department of Electronics Engineering and Institute of Electronics
A high-sensitivity lateral photodetector (PD) with an ultrathin absorption layer was fabricated by a low-temperature poly-silicon (LTPS) process via body-extension-contact (BEC) structure. The sensitivity of the LTPS PD with the BEC structure achieved a superior photo/dark current ratio of 105 compared to the ratio of 10(0.5) for the normal PD. Further, for the first time, the effect of photosensitivity and geometry on the ideality factor (n) was investigated in this study. The developed high-performance PD is suitable for application in image scanners, ambient light sensors, or devices embedded in larger area electronics.