Browsing by Author "Wei, Zhao-Hui"

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Reliability Analysis of Amorphous Silicon Thin-Film Transistors during Accelerated ESD Stress
(2015)
Tsai, Jung-Ruey
;
Wen, Ting-Ting
;
Yang, Shao-Ming
;
Sheu, Gene
;
Chang, Ruey-Dar
This work investigates the degradation of electrical characteristics of amorphous silicon thin-film transistors during the accelerated ESD stress with a 40V high voltage and a high/low current of 2 mA/0.1 mu A conditions. Both the leakage current and the threshold voltage shift are severe as the accelerated ESD stress applied at the gate region. The 40V accelerated ESD stress with a high current has more severe impact on the electrical performance of device than that with a low current.